Cheil Industries Inc.

Samsung Sdi Co., Inc.

Cheil Industry, Inc.

Seung-Hee Hong

Hyun-Ji Song

Han-Song Lee

Taek-Soo Kwak

Eun-Su Park

Yoong-Hee Na

Go-Un Kim

Young-Min Kim

Sang-Kyun Kim

Jin-Hee Bae

Yun-Jun Kim

Chung-Heon Lee

Kwen-Woo Han

Yong-Woon Yoon

Hea-Jung Kim

Sang-Hak Lim

Mi-young Kim

Yoo-Jeong Choi

Hui-Chan Yun

Joon-Young Moon

You-Jung Park

Byeong-Gyu Hwang

Bo-Sun Kim

Yu-Shin Park

Seung-Wook Shin

Jin-Woo Seo

Bong-Hwan Kim

Yo-Choul Park

Min-Soo Kim

Sung-Min Kim

Sung-Hwan Kim

Youn-Hee Nam

Seulgi Jeong

Wan-Hee Lim

Mi-Young Kim

Songse Yi

Byeri Yoon

Woo-Jin Lee

Jin-Wook Lee

Sun-Hae Kang

Jae-Yeol Baek

Naery Yu

Yeon-Hee Jo

Jong-Dae Jeon

Sun-Min Hwang

Won-Jong Hwang

MyeongKoo Kim

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1: 

Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2:(R)SiXSi(R)&#x2003;&#x2003;[Chemical Formula 1]R(Si)OR.&#x2003;&#x2003;[Chemical Formula 2]

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.

Resist underlayer composition and process of producing integrated circuit devices using same

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Uiwang-si, South Korea

Seung-Hee Hong