Samsung Electronics Co., Ltd.

Seoul National University

Korea Institute of Machinery & Materials

Industry-academic Cooperation Foundation, Dankook University

Industrial Cooperation Foundation of Chonbuk National University

Todae Co., Ltd.

M.i.tech Co., Ltd.

Seung Ha Oh

Sung June Kim

Jun Ho Lee

Yong Kim

Sang Jin Hyun

Jong Ho Park

Hee Chan Kim

Ho-Jin Lee

Hoon Joo Na

Shin Hur

Won Keun Chung

Wan-Doo Kim

Kwang Jin Moon

Sang Yong Kim

Young Do Jung

Myung-Whan Suh

Myung Whan Suh

Jeong Hoan Park

Il Yong Park

Chung Ku Rhee

Yoon-Bong Hahn

Yong-Kyu Park

Juyong Chung

Tae Mok Gwon

Yoon-Kyu Song

Phil Sang Chung

Chiheon Kwon

Joong Woo Ahn

Yunseo Ku

Chae Bin Kim

Won Hee Lee

Se-ik Park

Hong Joo Lee

Soon Kwan An

A semiconductor device comprises a substrate that including a frontside comprising an active region and a backside opposite to the frontside, an electronic element on the active region, a frontside wiring structure electrically connected to the electronic element on the frontside of the substrate, and a backside wiring structure electrically connected to the electronic element on the backside of the substrate. The backside wiring structure includes a plurality of backside wiring patterns sequentially stacked on the backside of the substrate, and a super via pattern that intersects and extends through at least one layer of the plurality of backside wiring patterns.

Semiconductor device including backside wiring structure with super via

The tinnitus testing apparatus of this invention comprises a control part that in turn comprises: an auditory stimulus generation part that can generate a stimulus; and an AEP acquisition and amplitude measurement part that can acquire auditory evoked potential (AEP) brain waves of a examinee due to said stimulus and measure the specific amplitude of said acquired brainwaves; wherein said auditory stimulus is one or more of: a 1st stimulus containing continuous noise and pulse noise; and a 2nd stimulus containing pulse noise and continuous noise with a silent gap.

Tinnitus testing device using brain waves and tinnitus testing method using same

Provided is a cochlear implant device with a glasses shape. The disclosed cochlear implant device improves body wearability and aesthetic effects by designing the cochlear implant device to have a glasses shape, and achieves alignment of a receiver coil implanted into the body and a transmission coil outside the body without using a magnet because the transmission coil is integrally provided at an end of a glasses temple such that a region of a body with which the transmission coil comes into contact is changed according to a bending degree of the glasses temple.

Glasses-shaped cochlear implant device

An apparatus for treating dizziness comprises an input unit configured to input a type of dizziness suffered by a patient, a storage unit configured to store different treatment methods respectively corresponding to different types of dizziness, an operation unit configured to search for a treatment method corresponding to the diagnosed type of dizziness among the treatment methods stored in the storage unit based on the diagnosed type of dizziness, and an output unit configured to output the searched treatment method for the inputted type of dizziness to the patient.

Apparatus for diagnosing and treating dizziness

A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

Semiconductor device and method for fabricating the same

The present invention relates to a cochlear implant apparatus, and more particularly, to a cochlear implant apparatus capable of controlling the sensitivity or selectivity of sound through actuators. In accordance with an exemplary embodiment of the present invention, a cochlear implant apparatus for active feedback control which is inserted into the human body and configured to detect a sound in each frequency band includes a sensor unit configured to detect vibration according to a sound and generate an electrical signal corresponding to a magnitude of the vibration and actuators disposed in the sensor unit and each configured to react to the electrical signal and to control sensitivity according to the magnitude of the sound or the selectivity of a sound detected in each frequency band.

Cochlear implant apparatus for active feedback control and active feedback control method for the same

Growing community of inventors

Seoul, South Korea

Seung Ha Oh