Samsung Electronics Co., Ltd.

Seung H Ahn

Gu S Kim

Ki Won Choi

Seung Kon Mok

Dong Kyu Kim

Young Jae Song

Jae Man Park

Jae Jin Kim

Young Soo Kwon

Tae Je Cho

Do Soo Jeong

Jong Guk Kim

Hyeon J Jeong

Se Yong Oh

Min Cheol An

Sang Eon Oh

Min Ho Lee

A lead-on-chip semiconductor device package is formed by attaching a lead frame having a single adhesive layer to a semiconductor chip. Electrode pads of the chip are electrically connected by bonding wires and mechanically connected by the adhesive layer to the lead frame, and then encapsulated by an encapsulant such as molding compound. The adhesive layer is formed from a liquid adhesive having a certain viscosity. The adhesive material is continuously applied to spaces between adjacent inner leads as well as the top surface of the leads and then cured. The leads are disposed at the same intervals and include some side leads with a larger width in order to form the adhesive layer with a uniform thickness. Thermoplastic resins are preferably used as the adhesive, but thermosetting resins may be used as well. In the case of thermoplastic resins, the temperature of a cure step is about 200.degree. C. and that of chip attachment step is about 400.degree. C.

Lead-on-chip semiconductor device package having an adhesive layer

A three dimensional stack package device that can realize vertical electrical interconnection of the stacked individual package devices without a cost increase or additional complicated processing steps. The three dimensional package device includes a plurality of individual semiconductor devices, each individual semiconductor device including (1) a semiconductor chip, (2) a protective body for encapsulating the semiconductor chip, (3) a lead frame comprising inner lead portions electrically interconnected to the semiconductor chip and included within the protective body, outer lead portions formed as a single body with the inner lead portions, and coupling lead portions located between the inner and outer lead portions and having a top surface exposed upward from the protective body, and (4) a plurality of vertical interconnection elements attached to a back surface of the coupling lead portions and exposed from the protective body in a direction opposing the exposed top surface of the coupling lead portions, whereby, an electrical interconnection of the plurality of individual semiconductor devices is accomplished by the coupling lead portions and the vertical interconnection elements, and electrical interconnection of the three dimensional stack package device to an external circuit device is accomplished by the outer lead portions of a lowermost semiconductor device.

Three dimensional stack package device having exposed coupling lead

A stacked semiconductor multi-package including a plurality of individual semiconductor chip packages stacked over one another. The individual packages have a substrate provided with a plurality of bonding pads, electrode pads electrically connected to the bonding pads through wires, and chips attached to upper and lower surfaces of the substrate. A paddles lead frame is provided onto which the individual packages are attached to upper and lower surfaces thereof, and variants thereof. For these packages, since individual packages are mounted on upper and lower surfaces of a single printed circuit board or lead frame, the mounting density can be significantly increased and their production can be simplified.

Semiconductor multi-package stack

A semiconductor package assembly includes recessed edge portions extending along at least one edge portion of the assembly and an upper surface of leads being exposed therefrom, a top recess portion disposed on a top surface of the assembly, and a bottom recess portion disposed on a bottom surface of the assembly. When the assemblies are used in fabricating a three-dimensional integrated circuit module, the recessed edge portions accommodates leads belonging to an upper semiconductor assembly to achieve electrical interconnection therebetween, the top recess portion and the bottom recess portion belonging to an upper semiconductor assembly form a space to accommodate a heat sink or a capacitor plate.

Semiconductor assembly for a three-dimensional integrated circuit package

A semiconductor device having at least one semiconductor chip loaded on a lower surface of a printed circuit board, electrode terminals of the semiconductor chip wire-bonded to terminals on the printed circuit board, and a connection portion of the semiconductor chip and wires encapsulated by means of encapsulating resin includes a semiconductor device of three-dimensional structure having the printed circuit board reversely mounted, the terminals of the printed circuit board connected to external terminals via through holes, and at least one semiconductor device stacked on an upper surface of the printed circuit board, thereby interconnecting respective semiconductor devices while interposing solder balls to be mounted to other printed circuit boards by leads being the external terminals. Thus, a ball grid array (BGA) package able to be stacked inside a small out-line J-lead (SOJ) package is used for performing interconnection to make the BGA overcome a typically two-dimensional flat mounting and attain a three-dimensional surface mounting structure while being perfectly compatible with a currently-available mounting process on the main substrate, thereby improving mounting efficiency.

J-leaded semiconductor package having a plurality of stacked ball grid

Disclosed herein is a high thermal emissive semiconductor device package which comprises a substrate having a plurality of external connection leads, a plurality of connection lands and wires between the leads and the lands; at least one semiconductor chips mounted on the substrate; bonding wires electrically connecting bonding pads of the chip and the connection lands of the substrate; a heat spreader with high thermal conductivity, which is attached to the upper surface of the bonding pads of the chip by insulating adhesives with good thermal conductivity; and a metal cap which is in contact with the upper surface of the heat spreader via thermal compounds and encapsulates the whole components by being sealed to the substrate. The high thermal emissive semiconductor device packages have advantageous that they efficiently emit heat generated during the operation of components and that they may be applied to various semiconductor devices which can be produced at low costs.

High thermal emissive semiconductor device package

A semiconductor memory module is formed of semiconductor packages respectively having at least one defect data line combined to be mounted to a module substrate which has two rows of auxiliary pads for excluding the defect data line of the mounted semiconductor packages from overall data lines of the module to thus attain more than a required memory capacity. By connecting the auxiliary pads with coupling units of resistors or jumper cables to isolate the defect data lines, the semiconductor memory module achieves the required memory capacity and utilizes defective semiconductor packages to reduce manufacturing costs, to attain excellent compatibility resulting from employing all kinds of semiconductor packages, and to simplify the data line connection process. Further, reworking semiconductor package is easy which improves yield, and humid air is prevented from permeating into the interior of the molding resin thereby preventing failures such as disconnection of wires and improving reliability.

Growing community of inventors

Suwon, South Korea

Seung H Ahn