Samsung Electronics Co., Ltd.

Seung-Gyun Kim

Sung-Taeg Kang

Hyun-Khe Yoo

Jung-Wook Han

Sang-Jin Lee

So-Hyun Kim

Se-Hwan Park

Sun-gi Hong

Du-Il Kim

Se-hwan Park

Jang-Hyun Yoon

Seok-Jae Jeong

Jin-Hee Choi

Seok-jae Jeong

Carsten Haitzler

Haitzler Carsten

Du-il Kim

An apparatus and method for scaling a layout of an application in an image display device are provided. The method for scaling includes generating a scaling variable considering a distance between the image display device and a user, and scaling a layout of an application using the scaling variable.

Apparatus and method for scaling layout of application in image display device

A non-volatile memory cell able to be written in a first direction and read in a second direction is described. The memory cell includes one or two charge trapping regions located near either the source or the drain, or both the source and the drain. During a programming operation, electrons can be injected into the charge trapping region by hot electron injection. During an erasing operation, holes can be injected into the charge trapping region. Embodiments of the invention include a charge trapping region that is overlapped by the control gate only to an extent where the electrons that were injected during a programming operation can be erased later by injecting holes in the charge trapping region.

Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell

Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure

Growing community of inventors

Gyengki-Do, South Korea

Seung-Gyun Kim