Electronics and Telecommunications Research Institute

Korea University Industrial Academic Collaboration Foundation

Seung Eon Moon

Jong Dae Kim

Kang Ho Park

Eun Kyoung Kim

Hong Yeol Lee

Jong Hyurk Park

Jae Woo Lee

Woo Seok Yang

Nak Jin Choi

Gyu Tae Kim

Hyung Kun Lee

Yil Suk Yang

Sang Kyun Lee

Sung Q Lee

Kwang Yong Kang

Su Jae Lee

Min Hwan Kwak

Hyun Jin Ji

Do Young Jang

Han Cheol Ryu

Hye Yeon Ryu

Eung Seook Park

Jung Hwan Huh

So Jeong Park

Disclosed is an electrochemical gas sensor using micro electro mechanical systems (MEMS). The MEMS electrochemical gas sensor includes: a substrate a lower central region of which is etched by a predetermined thickness; a first insulation film formed on the substrate; a heat emitting resistance body formed on the first insulation film; a second insulation film formed on the heat emitting resistance body; a reference electrode formed in an upper central region of the second insulation film; a solid electrolyte formed on the reference electrode; and a detection electrode formed on the solid electrolyte.

MEMS electrochemical gas sensor

Disclosed are a gas sensor, and a method of manufacturing and using the same. The method includes: forming a detection material on a heater; coating an encapsulant on the detection material; and heating the heater to remove the encapsulant from the detection material when the gas sensor is operated.

Gas sensor and method of manufacturing the same

Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.

Microelectromechanical systems type semiconductor gas sensor using microheater having many holes and method for manufacturing the same

Provided is an active piezoelectric energy harvester, which can control a direct current voltage applied to an embedded variable capacitance layer to precisely adjust a resonance frequency in real time, and thus achieve a simpler structure and a smaller size compared to a conventional one that adjusts the resonance frequency using a separate variable capacitor provided outside. Further, the active piezoelectric energy harvester can precisely adjust the resonance frequency even when the frequency of vibration varies over time as in a real natural vibration environment or when it is degraded to undergo a variation in its own resonance frequency, and thus can continuously maintain optimal energy conversion characteristics.

Active piezoelectric energy harvester with embedded variable capacitance layer and method of manufacturing the same

Provided are a piezoelectric energy harvester and a method of manufacturing the same. The piezoelectric energy harvester is configured to obtain primary voltage from a piezoelectric layer vibrated to generate voltage and secondary voltage from a magnetostrictive layer vibrated to induce a change in magnetic field and a coil surrounding the magnetostrictive layer. Thus, it is possible to obtain sufficient voltage to drive a power conditioning circuit (PCC).

Apparatus employing piezoelectric energy harvester capable of generating voltage to drive power conditioning circuit and method of manufacturing the same

Provided are an apparatus for collecting environmental data and a method of monitoring an environment in real time. The apparatus for collecting environmental data includes a receiver for receiving an environmental data collection command from outside, a headset controller for interpreting the environmental data collection command received from the receiver, and distinguishing an audio signal received from outside from the environmental data collection command, the environment sensor unit for collecting environmental data according to the environmental data collection command interpreted from the headset controller, and a transmitter for transmitting the environmental data collected by the environment sensor unit.

Apparatus for collecting environmental data and method of monitoring environment in real time

A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process.

Method of fabricating electronic device using nanowires

Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

Method of fabricating nano-wire array

Provided is an optical microscope system for detecting nanowires to allow for use of an existing optical microscope in fabricating an electronic device having the nanowires and including: a light source for emitting light to provide the light to a nanowire sample; a rotational polarizer provided on a path of the light emitted from the light source for polarizing the light; an optical microscope for detecting a nanowire image using light that is polarized by the rotational polarizer and incident on the nanowire sample; a CCD camera provided in a region of the optical microscope for photographing and storing the nanowire image detected by the optical microscope; and a data processor for performing Fast Fourier Transform (FFT) on the nanowire image stored in the CCD camera. Intensity of reflected light varies, due to optical anisotropy of the nanowires, along a polarizing orientation of light incident on the nanowires.

Optical microscope system for detecting nanowires using polarizer and fast fourier transform

A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABOstructure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaSr)TiOthin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.

Growing community of inventors

Daejeon, South Korea

Seung Eon Moon