Seoul Viosys Co., Ltd.

Seung Chul Park

Jun Ho Yun

Woo Chul Gwak

Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

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Ansan-si, South Korea

Seung Chul Park