Hynix Semiconductor Inc.

Dongjin Semichem Co., Ltd.

Youngchang Chemical Co., Ltd.

Seung Chan Moon

Cheol Kyu Bok

Jae Chang Jung

Chang Moon Lim

Geun Su Lee

Ki Soo Shin

Sam Young Kim

Seung Hun Lee

Jung Woo Kim

Jae Hyun Kim

Keun Do Ban

Ki Cheol Shin

Jae-chang Jung

Sung Koo Lee

Ki-Soo Shin

Cheol-Kyu Bok

Young Sun Hwang

Jae Hyun Kang

Hee Youl Lim

Myoung Ja Min

Sang Hyang Lee

A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.

Method for manufacturing a semiconductor device

A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

Photoresist coating composition and method for forming fine pattern using the same

Polymer for immersion lithography and photoresist composition

A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.

Method for forming fine pattern of semiconductor device

Disclosed herein is a top anti-reflective coating polymer represented by Formula 1, below: wherein R1 and R2 are independently hydrogen, fluoro, methyl or fluoromethyl; R3 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are partly replaced by fluorine atoms; and a, b and c, representing the mole fraction of each monomer, are in the range between 0.05 and 0.9. Because a top anti-reflective coating formed using the anti-reflective coating polymer of Formula 1 is not soluble in water, it can be applied to immersion lithography using water as a medium for a light source. In addition, because the top anti-reflective coating can reduce the reflectance from an underlying layer, the uniformity of CD is improved, thus enabling the formation of an ultra fine pattern.

Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same

Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below:  Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern of a semiconductor device.

Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern

Disclosed herein is a photoacid generating polymer represented by Formula 1 below: wherein Ris a Chydrocarbon or a Chydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; Ris hydrogen or a methyl group; and a, b, c and d represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, and d equals one. Since the photoacid generating polymer of Formula 1 is not water-soluble and acts as a photoacid generator, it can be used to prepare a top anti-reflective coating composition for immersion lithography.

Photoacid generating polymer, its preparation method, top anti-reflective coating composition comprising the same, method of forming a pattern in a semiconductor device, and semiconductor device

Disclosed herein is a top anti-reflective coating composition which comprises a photoacid generator represented by Formula 1 below.  Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern on a semiconductor device.

Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same

Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises HO as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. 

Cleaning solution for photoresist and method for forming pattern using the same

A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same

Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness).

Photoresist polymer and photoresist composition containing the same

Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.

Growing community of inventors

Yongin-si, South Korea

Seung Chan Moon