Samsung Electronics Co., Ltd.

Hyundai Motor Company

Skhynix Inc.

Kia Motors Corporation

Seung-Bum Kim

Deok-Woo Lee

Do-Hyung Kim

Min-Su Kim

Dae-Sik Park

Se-Han Kwon

Chang-Youn Hwang

Hong-Gu Yi

Noh-Jung Kwak

Yun-Je Choi

Ki-Soo Choi

Doo-Sung Jung

Jin-Woo Park

Seung-Jae Lee

Ji-Young Lee

Il-Han Park

Dong-Ku Kang

Jong-chul Park

Se-Hwan Park

Dong Ku Kang

Su-Chang Jeon

Myung-Hoon Choi

Wan-Dong Kim

Han-Jun Lee

Chul-Bum Kim

Ji-yoon Park

You-se Kim

Tae-young Kim

Kitae Park

Il Han Park

Seung-Jin Yeom

Dong-Hun Kwak

Jaeyong Jeong

Bon Chang Koo

Sung-Won Lim

Hyo-Seok Lee

Dong-woo Lee

Chan-Ho Kim

Nam-Yeal Lee

Seung-Hee Hong

Sei-Jin Kim

Dong-seok Kim

Hee-Chan Choi

Woopyo Jeong

Sun-Jun Park

Nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory blocks, the memory blocks including a plurality of memory cells coupled to word-lines respectively, the word-lines are stacked vertically on a substrate, and some memory cells of the plurality of memory cells are selected by sub-block unit smaller than one memory block. The control circuit divides sub-blocks of a first memory block into at least one bad sub-block and at least one normal sub-block based on error occurrence frequency of each of the sub-blocks, and applies different program/erase cycles to the at least one bad sub-block and the at least one normal sub-block based on a command and an address provided from external to the nonvolatile memory device. The at least one bad sub-block and the at least one normal sub-block are adjacent each other.

Nonvolatile memory device, method of operating nonvolatile memory device and storage device including the same

A memory device includes: a memory cell array; a control logic circuit; and a row decoder. The row decoder is configured to activate string selection lines based on control of the control logic circuit. A program interval is formed between a first program operation and a second program operation. The control logic circuit includes a reprogram controller configured to control the row decoder so that a program interval differs in the memory cells connected to different string selection lines among the memory cells connected to a first wordline.

Memory device having improved data reliability by varying program sequences

A nonvolatile memory device includes a memory cell region having a first metal pad and a peripheral circuit region having a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad, a a memory cell array in the memory cell region and an address decoder in the peripheral circuit region. The memory cell array includes memory blocks, and each memory block includes memory cells coupled to word-lines respectively. The word-lines are stacked vertically on a substrate, and some memory cells of the plurality of memory cells are selectable by a sub-block unit smaller than one memory block of the plurality of memory blocks. The address decoder applies an erase voltage to each of sub-blocks in a first memory block of the plurality of memory blocks through the first metal pad and the second metal pad.

Nonvolatile memory device

Disclosed are a semiconductor device capable of reducing parasitic capacitance between adjacent conductive structures and a method for fabricating the same. The semiconductor device includes a plurality of bit line structures each comprising a first contact plug formed over a substrate and a bit line formed over the first contact plug. A spacer structure having air gaps is formed on sidewalls of the first contact plug and on sidewalls of the bit line. An plug isolation layer is formed between the plurality of bit line structures. The isolation layer includes an opening. A second contact plug is formed in the opening and a memory element is formed over the second contact plug.

Semiconductor device including air gaps and method for fabricating the same

Nonvolatile memory device includes memory cell region including a first metal pad and a second metal pad, peripheral circuit region including a third metal pad and a fourth metal pad, vertically connected to the memory cell region. The nonvolatile memory device includes a page buffer circuit including page buffers to sense data from selected memory cells, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch to sequentially store results of the two sequential sensing operations. The nonvolatile memory device includes control circuit in the peripheral circuit region, to control the page buffers to store result of the first read operation, reset the latches after completion of the first read operation, and control the page buffers to perform the second read operation based on a valley determined based on the result of the first read operation.

Nonvolatile memory devices

A memory device includes: a memory cell region; a peripheral circuit region; a memory cell array; a control logic circuit; and a row decoder. The row decoder is configured to activate string selection lines based on control of the control logic circuit. A program interval is formed between a first program operation and a second program operation. The control logic circuit includes a reprogram controller configured to control the row decoder so that a program interval differs in the memory cells connected to different string selection lines among the memory cells connected to a first wordline.

Three-dimensional NAND flash memory device having improved data reliability by varying program intervals, and method of operating the same

Memory device having improved data reliability by varying program intervals, and method of operating the same

A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.

Non-volatile memory device, operating method thereof, and storage device including the non-volatile memory device

Nonvolatile memory device includes a memory cell array including pages, each of the pages including memory cells storing data bits, each of the data bits being selectable by a different threshold voltage, a page buffer circuit coupled to the memory cell array through bit-lines, the page buffer circuit including page buffers to sense data from selected memory cells, and perform a first read operation and a second read operation, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch configured to sequentially store results of the two sequential sensing operations, and a control circuit to control the page buffers to store a result of the first read operation, reset the latches after completion of the first read operation, and perform the second read operation based on a valley determined based on the result of the first read operation.

Nonvolatile memory devices and methods of operating a nonvolatile memory

A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.

Nonvolatile memory device and an erase method thereof

A nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory blocks, each including a plurality memory cells coupled to word-lines respectively, and the word-lines are stacked vertically on a substrate. The control circuit divides a first memory block of the plurality of memory blocks into a partial bad region and a partial normal region based on error information of an uncorrectable error of the first memory block which is designated as a bad block. The control circuit performs a memory operation on the partial normal region by applying a first bias condition to the partial bad region and by applying a second bias condition to the partial normal region, based on a command and an address, and the first bias condition is different from the second bias condition.

A non-volatile memory device includes multiple word lines, and a voltage generator. Some of the word lines correspond to a deterioration area. The voltage generator is configured to generate a program voltage provided to multiple memory cells through the word lines. Control logic implemented by the non-volatile memory device is configured to control a program operation and an erase operation on the word lines. The deterioration area includes word lines of a first group and word lines of a second group. The control logic is configured to control a program sequence so that each of the word lines of the second group is programmed after an adjacent word line of the first group is programmed, and to control a distribution so that a threshold voltage level corresponding to an erase state of each of the word lines of the first group is higher than a threshold voltage level corresponding to an erase state of each of the word lines of the second group.

Non-volatile memory device for improving data reliability and operating method thereof

Growing community of inventors

Hwaseong-si, South Korea

Seung-Bum Kim