Samsung Electronics Co., Ltd.

Seung-Back Shin

Young-Lim Park

Dong-Hyun Im

Jung-Hyeon Kim

Jin-il Lee

Hyeong-Geun An

Sung-Lae Cho

Jin-Ha Jeong

Urazaev Vladimir

Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.

Methods of forming a phase change memory device

Growing community of inventors

Seoul, South Korea

Seung-Back Shin