Hitachi, Ltd.

Seturo Yagyu

Takaya Suzuki

Akio Mimura

Shinji Okuhara

In a monolithic semiconductor integrated circuit, when polycrystalline semiconductor is used in a portion of substrate insulatively supporting plural semiconductor single crystal regions forming circuit elements, the oxidation process of the impurity diffusion process at high temperatures and in oxygen atmosphere is started after a passivation film such as silicon oxide or silicon nitride, to prevent oxygen from diffusing or penetrating into the surface of the polycrystalline semiconductor, has been formed on the same surface. By leaving the passivation film lying on that surface during the oxidation and diffusion process warping of the substrate that may be caused due to the diffusion or penetration of oxygen into the polycrystalline semiconductor region is prevented.

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Hitachi, Japan

Seturo Yagyu