Disco Corporation

Nippon Electric Co., Ltd.

Kabushiki Kaisha Toshiba

Setsuo Yamamoto

Shinya Watanabe

Takatoshi Masuda

Keiichi Kajiyama

Yasuichi Ushiyama

Sinnosuke Sekiya

Kazuma Sekiya

Seiji Harada

Masashi Aoki

Hirotoshi Hoshikawa

Norio Sasaki

Yoshikazu Kobayashi

Naoya Sukegawa

Naruto Fuwa

Yutaka Koma

Nobuyuki Goto

Noboru Narikawa

Shigehiko Aoki

Takuji Takayama

Shinnosuke Sekiya

A processing apparatus includes a chuck table for holding a plate-shaped workpiece under suction on a holding surface thereof, a processing unit for processing the workpiece held on the holding surface of the chuck table, and a moving unit for moving a support base supporting the chuck table thereon in a processing-feed direction. The chuck table is formed from a porous material having pores, and has the holding surface and a mountable assembly positioned opposite the holding surface and mountable on an upper surface of the support base. Fluid passages defined in the chuck table for allowing a negative pressure transmitted from the support base to act on the holding surface are provided only by the pores in the porous material.

Chuck table and method of manufacturing chuck table

A laser processing apparatus includes: a chuck table for holding a single-crystal SiC ingot on a holding surface thereof; a laser beam applying unit for applying a laser beam to the single-crystal SiC ingot held on the holding surface of the chuck table; and a camera unit configured to capture an image of the single-crystal SiC ingot held on the holding surface of the chuck table. The chuck table includes a porous material making up the holding surface and a glass frame made of a non-porous material and having a recess defined therein and receiving the porous material fitted therein, and a negative pressure transfer path for transferring a negative pressure to the porous material fitted in the recess.

Laser processing apparatus and laser processing method

A wafer manufacturing apparatus includes a chuck table configured to hold an SiC ingot by a suction surface with a wafer to be manufactured on an upper side, an ultrasonic oscillating unit configured to oscillate an ultrasonic wave, a water supply unit, and a peeling unit configured to suck and hold the wafer to be manufactured, and peel the wafer to be manufactured. The chuck table includes a porous plate forming the suction surface and a base supporting the porous plate, and sucks and holds the SiC ingot even in a state in which an area of a second surface of the SiC ingot is smaller than an area of the suction surface, and the water flows on the suction surface exposed on the periphery of the SiC ingot.

Wafer manufacturing apparatus

A porous chuck table for holding a plate-like workpiece under suction includes a porous plate having a porous structure, the porous plate having a holding surface for holding the workpiece under suction thereon, and a frame surrounding the porous plate and having a face side lying flush with the holding surface. The porous plate is at least made of spherical glass particles, adjacent ones of the glass particles are partly joined together, and interstices between adjacent ones of the partly joined glass particles function as pores through which a fluid can flow.

Porous chuck table

A chuck table includes a main part having a holding surface for holding thereon a workpiece through a dicing tape, and a frame holder disposed around the main part for holding the annular frame. The main part has a flat surface that functions as the holding surface, an outer circumferential suction groove defined in a region of the holding surface that underlies an annular region of the adhesive tape between the workpiece and the frame of the frame unit, for holding the annular region of the adhesive tape under suction, and a suction channel held in fluid communication with the outer circumferential suction groove and a suction source. The frame holder pulls down the frame to a position lower than the holding surface to hold the dicing tape in close contact with the holding surface.

Chuck table, cutting apparatus, and method correcting chuck table

A chuck table for holding a plate-shaped workpiece under suction includes a suction plate made of porous ceramics and having a plurality of open pores, and a frame covering a side surface and a reverse side, except an attractive suction surface, of the suction plate and having a plurality of suction grooves defined in an upper surface thereof and a fluid communication passage defined therein that holds the suction grooves in fluid communication with a suction source, the frame supporting the suction plate thereon. The suction plate has a porosity in the range from 60% to 70% by volume, and the open pores have diameters in the range from 10 &#x3bc;m to 25 &#x3bc;m.

Chuck table and method of manufacturing suction plate of porous ceramics

A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.

Method of grinding wafer

A polishing tool comprising a support member, and polishing means fixed to the support member. The polishing means is composed of felt having a density of 0.20 g/cmor more and a hardness of 30 or more, and abrasive grains dispersed in the felt. A polishing method and apparatus involving pressing the polishing means against a surface of a workpiece to be polished, while rotating the workpiece and also rotating the polishing tool.

Polishing tool and polishing method and apparatus using same

In a semiconductor wafer processing method of forming a semiconductor wafer having a desired thickness by grinding a rear surface of the semiconductor wafer having a plurality of devices formed on a front surface thereof, the rear surface of the semiconductor wafer is ground so that the semiconductor wafer has a thickness of 10 &#x3bc;m to 100 &#x3bc;m, and a strain layer having a thickness of 0.05 &#x3bc;m to 0.1 &#x3bc;m is left on the rear surface of the semiconductor wafer by the grinding. The strain layer is left to provide the gettering effect, preventing a harmful influence exerted on the quality of the semiconductor devices. Degradation in transverse rupture strength can be prevented by the grinding.

Semiconductor wafer processing method

Polishing tool

A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 &#x3bc;m with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 &#x3bc;m and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 &#x3bc;m.

Grinding method for wafer

A routing system for finding a route which satisfies predetermined limiting conditions in a space of an object space with an aid of a computer, includes a first processor for dividing at least the object area into a plurality of areas and extracting a divided area or divided areas which satisfy the predetermined limiting conditions from the plurality of divided areas, and a second processor for further dividing the divided area or divided areas extracted by the first processor into a plurality of subdivided areas and extracting a subdivided area or subdivided areas which satisfy the predetermined limiting conditions from the plurality of subdivided areas.

Routing method and system

In an automatic centering unit for a color television camera, a signal representing a phase-difference between video signals of different color channels is picked up to produce a correction voltage only when correlation of video signals exists for each selected discrete area on the television screen between predetermined time points having an interval of time of at least a frame period, so that the centering unit allows an accurate and quick operation even if focusing is not sufficient or if noise is contained in the video signal.

Centering unit for a color television camera apparatus having plural

In order to stabilize the black level in the red, green or blue channel, black pulses are inserted during a blanking period and are of a level slightly higher than the black level. The resulting color signal is clamped in a first clamping circuit to a predetermined voltage during that part of the blanking period which is free of the black pulse inserted therein, and, after being processed for white compression, black clipping or gamma correction, is provided to a second clamping circuit for fixing the clamping point at a definite and preselected voltage. The black pulse level of the output from the second clamping circuit is compared with a reference voltage and, upon the result obtained, the clamp voltage of the first clamping circuit is controlled to thereby completely suppress black level variations. With this processing amplifier device, the pedestal level is adjustable by varying either the reference voltage or the level of the black pulses.

Growing community of inventors

Tokyo, Japan

Setsuo Yamamoto