Sony Corporation

Sony Corporation Research Center

Setsuo Usui

Dharam Pal Gosain

Jonathan Westwater

Takashi Noguchi

Miyako Nakagoe

Akio Machida

Naoki Sano

Toshiyuki Sameshima

Masaki Hara

Kazumasa Nomoto

Yoshifumi Mori

Hideharu Nakajima

Akikazu Shibata

Akashi Sawada

Junichi Sato

Yasuhiro Kanaya

Yuji Ikeda

Masafumi Kunii

Yoshinori Hayafuji

Yasuhiro Sakamoto

Seiichi Watanabe

Takeshi Matsushita

Noriyuki Kawashima

Kenichi Taira

Kunio Hane

Toru Hiraga

Atsushi Kono

Gosain D Pal

Yoshinari Hayafuji

A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

An optical energy conversion apparatusincludes a first impurity doped semiconductor layer, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer, formed on the first impurity doped semiconductor layer, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer, admixed with a second impurity and formed on the optically active semiconductor layer. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layerand the second impurity doped semiconductor layeris decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate. By controlling the hydrogen concentration of the second impurity doped semiconductor layer, the number of dangling bonds in the second impurity doped semiconductor layeris significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus

Optical energy conversion apparatus

A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.

Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element

The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer () is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate () to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate () and the functional layer () is shut off by an organic polymer layer () lower in thermal expansion coefficient than the substrate (), thereby causing no cracks nor separations in the functional layer (). The organic polymer layer () is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate () and the functional layer () will permit a more powerful laser irradiation.

Functional device and method of manufacturing the same

For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.

Semiconductor device and its manufacturing method

In a manufacturing method of a thin-film transistor having a polycrystalline Si film as its active region, an amorphous-phase Si film is first formed, and pulse laser beams are irradiated to crystallize the Si film and thereby form a polycrystalline Si film. After electrodes are made on a source region and a drain region, a SiN film as a hydrogen-containing film is formed on the entire surface. By irradiating pulse laser beams to heat the SiN film, hydrogen in the SiN film is diffused into the polycrystalline Si film to hydrogenate it and reduce the trap density along crystal grain boundaries in the polycrystalline Si film.

Semiconductor device manufacturing method

A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls ( ) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer ( ), dopant ions ( ) are adsorbed on the surface of the semiconductor layer ( ) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer ( ) having the formed mask to introduce the dopant ions into the semiconductor layer ( ). In the lower part of the mask such sidewalls ( ), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.

Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device

An amorphous silicon thin film includes a plastic substrate as a base, and insulating layers are formed thereon each radiated with a pulse laser beam which removes volatile contaminants like a resist as a pretreatment. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. it is possible to increase energy intensity of energy beam radiated for the polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.

Plastic substrate for a semiconductor thin film

A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF FABRICATING SINGLE CRYSTAL THIN FILM, SINGLE CRYSTAL THIN FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE

A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer ( ) and a heat-resistant layer ( ) are formed in this order on a substrate ( ) made of an organic material such as polyethylene terephthalate, and a functional layer ( ) made of polysilicon is formed thereon. The functional layer ( ) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate ( ) and the substrate ( ) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate ( ) and the functional layer ( ) is absorbed by the low-temperature softening layer ( ), so that no cracks and peeling occurs in the functional layer ( ). The low-temperature softening layer ( ) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate ( ) and the functional layer ( ), a laser beam of higher intensity can be irradiated.

A polycrystalline silicon layer is formed on a substrate. An insulating layer and a gate electrode are formed on the polycrystalline silicon layer. Then, a channel region, a source region and a drain region are formed in a self-aligned manner by doping an impurity in the polycrystalline silicon layer using the gate electrode as a mask. Then, an energy absorption layer is formed so as to cover the entire substrate and a pulsed laser beam is irradiated from the energy absorption layer side. The energy of the pulsed laser beam is almost completely absorbed in the energy absorption layer and a heat treatment is indirectly performed on the underlying layers by radiating the heat. In other words, activation of the impurity and removal of defects in the insulating layer are performed at the same time without damaging the substrate by the heat.

Method of manufacturing semiconductor device

Disclosed are a method manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.

Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device

A functional device and method of manufacturing the same are disclosed. A low-temperature softening layer and a heat-resistant layer are formed in this order on a substrate made of organic material such as polyethylene terephthalate, and a functional layer made of polysilicon is formed thereon. The functional layer is formed by crystallizing an amorphous silicon layer (precursor layer), with laser beam irradiation. When a laser beam is applied, heat causes the substrate to expand. However, stress caused by a difference in a thermal expansion coefficient between the substrate and the functional layer is absorbed by the low-temperature softening layer, so that no cracks and peeling occurs in the functional layer. The low-temperature softening layer is preferably made of a polymeric material containing acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate and the functional layer, a laser beam of higher intensity can be irradiated.

A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the <100> direction.

Growing community of inventors

Kanagawa, Japan

Setsuo Usui