Anritsu Corporation

Setsuo Kodato

Jun Hiraoka

Masao Nakamura

Shiro Karasawa

Kenji Akimoto

Seishiro Ohya

Hiroyasu Yuasa

Yoshinobu Naitoh

A wide-band RF signal power detecting element includes, on an insulating substrate ( ), at least one thin-film resistor ( ) for absorbing the power of a signal to be measured and generating heat, first and second ground electrodes ( ) formed by thin-film conductors, a first thin-film connecting portion ( ) for electrically connecting the first ground electrode ( ) to the thin-film resistor ( ), a second thin-film connecting portion ( ) for electrically connecting the second ground electrode ( ) to the thin-film resistor ( ) and narrowing the gap between the first and second thin-film connecting portions ( ) toward the thin-film resistor ( ), and an input electrode ( ) formed between the first and second ground electrodes ( ) and electrically connected to the thin-film resistor ( ).

Wide-band RF signal power detecting element and power detecting device using the same

In order, to manufacture a high-performance infrared-emitting element having high-speed thermal response characteristics and a high infrared emissivity, a bridge (heat-generating) portion having a separation space is formed on a silicon element substrate. The bridge portion is formed to have a thickness of 5 &mgr;m or less by doping boron as an impurity by ion implantation with a concentration distribution peak value of 1.5&times;10,atoms/cm,or more, and performing annealing under predetermined conditions for activating the impurity layer. In the infrared-emitting element manufactured in this manner, even if the bridge portion is made thin to improve the thermal response characteristics, the infrared emissivity does not decrease because of a high impurity concentration, and a large temperature modulation width can be obtained. In doping boron as the impurity by ion implantation, the dose is preferably set to 3.0&times;10,ions/cm,or more. To activate the impurity layer upon doping boron, the annealing is performed in the nitrogen gas atmosphere at a temperature of 1,100&deg; C. to 1,200&deg; C. for 5 min to 40 min and further in the wet oxygen atmosphere for about 25 min to 40 min. As a result, the doping concentration of boron by ion implantation and the activation of the impurity layer can be stably increased and enhanced.

Process for producing infrared emitting device and infrared emitting device produced by the process

Temperature sensor system using a micro-crystalline semiconductor thin

Sensing system for measuring specific value of substance to be measured

The electric resistor of this invention is comprised of a Si-Ge alloy thin film containing amorphous and microcrystal phases which serve as an electric resistance, thereby keeping the resistance value ratio substantially constant and uninfluenced by frequency changes which range from d.c. to 32 GHz. In addition, the power detector of this invention uses a thermocouple which is made by connecting the conductor film with the above-mentioned alloy thin film having great thermoelectric power. The thermocouple is provided with beam lead electrodes at cold junction areas to thereby produce large temperature differences between the hot and cold junctions, so that the thermocouple is provided with a sufficient thermal gradient to detect very low power with high accuracy.

Electric resistor having a thin film conductor

Electric resistor and a power detector both comprising a thin film

The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.

Thin film conductor which contains silicon and germanium as major

Method of manufacturing thin film conductor which contains silicon and

Growing community of inventors

Atsugi, Japan

Setsuo Kodato