Hitachi Metals, Ltd.

Tottori University

Setsuo Andoh

Takahiro Sugiyama

Kazufumi Suenaga

Yuju Endo

Hisashi Tate

Ken Asada

Fumitake Taniguchi

Ryouji Inoue

Yuji Kawauchi

Hiroki Sakaguchi

Hiroyuki Usui

Hidehisa Yamaguchi

Provided is a differential signal transmission cable, a multi-core cable, and a method of manufacturing a differential signal transmission cable that can suppress an increase in differential-to-common mode conversion quantity. The differential signal transmission cable includes two signal lines, an insulation layer covering a periphery of the two signal lines, and a plating layer covering the insulation layer. Differential-to-common mode conversion quantity of the differential signal transmission cable has a maximum value of &#x2212;26 dB or less, in a frequency band of 50 GHz or less. In the method of manufacturing a differential signal transmission cable, dry ice blasting is performed on an outer peripheral surface of the insulation layer, and then corona discharge exposure is performed on the outer peripheral surface.

Differential signal transmission cable, multi-core cable, and manufacturing method of differential signal transmission cable

This secondary battery negative electrode material constitutes an active material layer formed on a current collector layer of a secondary battery negative electrode and includes a Si particle and a coating material containing Ni and P, formed to cover a surface of the Si particle.

Secondary battery negative electrode material, secondary battery negative electrode, method for manufacturing secondary battery negative electrode material, and method for manufacturing secondary battery negative electrode

There is a highly reliable semiconductor module having a satisfactory bonding strength in the electrical bonded portion. In the semiconductor module, a semiconductor chipis mounted on a circuit board. In the circuit board, on an insulating ceramic substrateis formed a metal circuit plateon which the semiconductor chipis implemented. The semiconductor chipand metal circuit plateare connected with each other by an aluminum bonding wire. In the connected portion between the metal circuit plateand bonding wire, a coating layerfor excellent conjunction therebetween is mounted. The coating layer, as shown in an enlarged diagram, is made up of a nickel (Ni) layer, a P-distributed palladium (Pd) layer, and an Au layerin increasing order. To the P-distributed Pd layeris added P (phosphorous) and, the P concentration on the Ni layeris higher than that on the Au layer side

Electrode structure and its manufacturing method, and semiconductor module

This invention provides a casing for storing MEA, which has satisfactory corrosion resistance to formic acid produced in an electrode reaction of MEA. There is also provided a casing formed of a material having the lowest possible specific gravity that can apply a suitable pushing pressure to MEA and a current collector without increasing the thickness dimension and is suitable for a power supply mounted, for example, in small portable electronic equipment. The casing is a casing for use in a fuel battery in which a hydrogen electrode, an oxygen electrode, and a film-electrode joint product formed of a proton conductive film held between the hydrogen electrode and the oxygen electrode are housed within the casing and, in removing water produced in an oxygen electrode reaction, the above water comes into contact with the casing. The casing for a fuel battery comprises a base material () formed of a magnesium alloy and a film () provided on the base material (). The film () comprises a conversion treated film (), an undercoating layer (), and a top coating layer () provided in that order from the base material side.

Casing for fuel battery and fuel battery using the same

Growing community of inventors

Tokyo, Japan

Setsuo Andoh