Seagate Technology Incorporated

Sethuraman Jayashankar

Michael C Kautzky

Michael Allen Seigler

Tong Zhao

Yuhang Cheng

Scott Michael Franzen

Kurt W Wierman

Ed F Rejda

Sarbeswar Sahoo

Jie Gong

Kaizhong Gao

Chubing Peng

Amit Vasant Itagi

Justin Glen Brons

Andrew Joseph Boyne

Lien Lee

Steve C Riemer

Yimin Niu

Hui Brickner

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Materials for near field transducers and near field transducers containing same

A method of forming a near field transducer (NFT), the method including the steps of depositing a primary material; and implanting a secondary element, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element.

Methods of forming near field transducers and near field transducers formed thereby

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

Materials for near field transducers, near field tranducers containing same, and methods of forming

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

A method of forming a near field transducer (NFT), the method including the steps of depositing a plasmonic material; depositing an encapsulant material on at least a portion of the plasmonic material; and implanting ions into at least a portion of the plasmonic material through the encapsulant material.

A device that includes a near field transducer (NFT), the NFT having a disc and a peg, and the peg having an air bearing surface thereof; and at least one adhesion layer positioned on at least the air bearing surface of the peg, the adhesion layer including one or more of platinum (Pt), iridium (Ir), ruthenium (Ru), rhodium (Rh), palladium (Pd), yttrium (Y), chromium (Cr), nickel (Ni), and scandium (Sc).

Devices including at least one adhesion layer and methods of forming adhesion layers

Disclosed herein are near field transducers (NFTs) that include either silver, copper, or aluminum and one or more secondary elements.

Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having an air bearing surface; and at least one adhesion layer positioned on the air bearing surface of the peg, the adhesion layer including one or more of the following: tungsten (W), molybdenum (Mo), chromium (Cr), silicon (Si), nickel (Ni), tantalum (Ta), titanium (Ti), yttrium (Y), vanadium (V), magnesium (Mg), cobalt (Co), tin (Sn), niobium (Nb), hafnium (Hf), and combinations thereof; tantalum oxide, titanium oxide, tin oxide, indium oxide, and combinations thereof; vanadium carbide (VC), tungsten carbide (WC), titanium carbide (TiC), chromium carbide (CrC), cobalt carbide (CoC), nickel carbide (NiC), yttrium carbide (YC), molybdenum carbide (MoC), and combinations thereof and titanium nitride (TiN), zirconium nitride (ZrN), hafnium nitride (HfN), and combinations thereof.

Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: rhenium, osmium, iridium, platinum, hafnium, ruthenium, technetium, rhodium, palladium, beryllium, aluminum, manganese, indium, boron, and combinations thereof beryllium oxide, silicon oxide, iron oxide, zirconium oxide, manganese oxide, cadmium oxide, magnesium oxide, hafnium oxide, and combinations thereof tantalum carbide, uranium carbide, hafnium carbide, zirconium carbide, scandium carbide, manganese carbide, iron carbide, niobium carbide, technetium carbide, rhenium carbide, and combinations thereof chromium nitride, boron nitride, and combinations thereof.

Growing community of inventors

Excelsior, MN, United States of America

Sethuraman Jayashankar