Intel Corporation

Seth M Slavin

John Heck

Mark Isenberger

Harel Frish

Wei Qian

Kelly Christopher Magruder

Ansheng Liu

Olufemi I Dosunmu

Lina He

Reece DeFrees

Mengyuan Huang

Sungbong Park

Nutan Gautam

Cung Tran

Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.

Embedded three-dimensional electrode capacitor

Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

Integrated photonic transceiver

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Albuquerque, NM, United States of America

Seth M Slavin