Applied Materials, Inc.

Sesh Ramaswami

Li-Qun Xia

Mehul B Naik

Bok Hoen Kim

Thomas E Nowak

Nagarajan Rajagopalan

Ji Ae Park

Ryan Yamase

Shamik Patel

Ran Ding

Jim Baldino

Srinivas Gandikota

Imran Hashim

Thomas B Brezoczky

Liang Light Chen

Daniel A Carl

Seh-Kwang Lee

Dennis Cong

A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Fabrication of through-silicon vias on silicon wafers

A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing a target and a substrate, and a magnet array disposed within the chamber to form a substantially parallel magnetic field at a surface of the substrate. The sputtering chamber reduces interference between the magnetron and the magnet array by providing a long throw distance and/or a grounded collimator. The magnet array is preferably a circular ring.

Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications

The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier layer is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the first surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.

Method for enhancing the adhesion of copper deposited by chemical vapor deposition

Growing community of inventors

Saratoga, CA, United States of America

Sesh Ramaswami