Alcatel Italia S.p.a.

Telettra S.p.a.

Sergio Pellegrino

Fabio Vidimari

Massimo Del Giudice

A semiconductor laser including a substrate, means for reducing the lateral current flow and means forming the active elements, wherein said means for reducing the lateral current flow are composed by at least three layers of which the external ones are entirely doped and the internal layers are doped only in the zones lateral to the active element so that these layers reduce the side current flow.

Semiconductor laser having low current threshold

A process for producing a multilayer device which emits coherent luminous radiation (laser radiation) upon the application of electric power. The device consists of a substrate, a first epitaxial layer, an active layer having a composition which emits luminous radiation of a desired wavelength, an optical and electric confinement layer, a further optical and electric confinement layer and an electric contact layered structure. To concentrate current flow through the active layer, the adjacent layer is implanted with ions of transition elements, preferably Co or Fe, which, when annealed by thermal treatment, have a high resistivity.

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Turin, Italy

Sergio Pellegrino