Littelfuse, Inc.

Sergio Fuentes Godinez

Martin G Pineda

Marco Doms

Yuriy Borisovich Matus

Werner Johler

Minh V Ngo

Cesar Martinez

Francois Perraud

Satoshi Sakamoto

Hajime Takahashi

Keiichiro Nomura

Toshikazu Yamaoka

Oluwaseun Kehinde Oyewole

A semiconductor device protection arrangement. The semiconductor device protection arrangement may include a semiconductor chip; a controller, coupled to the power semiconductor chip; and a temperature sensor, disposed in thermal contact with the semiconductor chip, where the temperature sensor includes a positive temperature indicator (PTI) component.

Overcurrent protection of power semiconductor packages using integrated positive temperature indicator

A fuse comprising including a housing, a fusible element disposed within the housing, first and second terminals extending from opposite ends of the fusible element and out of the housing, and a quantity of arc suppressing material disposed on the fusible element, wherein the arc suppressing material is formed of a polyamide hotmelt adhesive mixed with a flame retardant.

Fuse with arc suppressing mastic material

A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, and electrically conductive first and second leads connected to the first and second electrodes, respectively, wherein the first and second electrodes are formed of a material having a melting point greater than 1100 degrees Celsius.

Metal oxide varistor with reinforced electrodes

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Chicago, IL, United States of America

Sergio Fuentes Godinez