Samsung Electronics Co., Ltd.

International Business Machines Corporation

Sergey Faleev

Stuart Stephen Papworth Parkin

Mahesh Govind Samant

Jaewoo Jeong

Yari Ferrante

Chirag Garg

Panagiotis Charilaos Filippou

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by AE, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

Ferrimagnetic Heusler compounds with high spin polarization

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San Jose, CA, United States of America

Sergey Faleev