Applied Materials, Inc.

Etec Systems, Inc.

Nawotec Gmbh

Carl Zeiss Sms Ltd.

Sergey Babin

Lee H Veneklasen

Robert Innes

Robin Lynn Teitzel

Klaus Edinger

David Trost

Thorsten Hofmann

Hans Wilfried Koops

Petra Spies

Allan L Sagle

Chen Hwa

Jeffrey Varner

Maria Spies

A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

Method for high-resolution processing of thin layers using electron beams

The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.

Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography

A charged particle beam column for generating a variable shaped (in cross section) charged particle beam. The charged particle beam column includes: a source of a charged particle beam; a first aperture defining a first opening positioned coaxial to the beam and spaced apart from the source; a second aperture defining a second opening positioned coaxial to the beam and spaced apart from the first aperture; a third aperture defining a third opening positioned coaxial to the beam and spaced apart from the second aperture; an imaging device coaxial to the beam, where the imaging device controls focusing of the beam; and at least two deflection devices coaxial to the beam which controls a path of the beam through the openings. The charged particle beam column alternatively includes a source of a charged particle beam; a first aperture defining a first opening positioned coaxial to the beam and spaced apart from the source; a second aperture defining a second opening positioned coaxial to the beam and spaced apart from the first aperture; a solenoid lens which controls focusing of the beam; and at least one deflection device coaxial to the beam which controls a path of the beam through the openings.

Apparatus and method for forming a charged particle beam of arbitrary shape

The present invention relates to methods and procedures for determining resist temperature during energy beam lithography and adjusting process parameters, including reducing the beam current, to compensate for increased resist sensitivity due to heating. The present invention relates to methods of predicting resist heating in real-time as the writing proceeds thereby enabling beam compensation to be performed in real-time. A linear superposition approximation is described that provides a procedure for estimating the resist temperature at the point presently being written from previously written points. The present invention makes use of the thermal history of the pattern previously written as that history is recorded in the line of pixels immediately preceding the line whose temperature is to be determined prior to e-beam exposure, and a single number representing the thermal history of lines written before the immediately preceding line. The iterative methods for calculating resist heating in the present invention may be implemented digitally on a variety of devices. In addition, specific analogue circuitry to reproduce this iterative method is described, leading to rapid calculations of resist heating. Advantages of the present invention include the prevention or mitigation of pattern blooming as incident electrons heat the resist and broaden the region of exposure.

Method and apparatus for real-time correction of resist heating in lithography

The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.

Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography

A shield assembly for reducing electron fogging effects in electron beam lithography. This shield, located between an electron beam column final aperture and the beam target, is of multiple vanes with sharp edges pointing towards the electron beam incident point on the target; the vanes are conically shaped and concentric around the electron beam path, which travels through the center of the assembly. Additionally, the sharp edges are such that they present oblique surfaces at the ends of the vanes angled between 10&deg; and 20&deg; relative to the outer vane surface and these oblique surfaces face towards the electron beam path. Furthermore, the shield assembly may also have the vanes angled towards the beam incident point such that the vertex of the conical vane assembly is coincident with the beam incident point.

Minimization of electron fogging in electron beam lithography

An electron beam pattern generating system for exposing a pattern on a substrate using a raster scan method. The system stores a rasterized representation of the pattern as a plurality of regular pixel dose exposure levels. These pixel dose exposure levels are evaluated by the system for one or more proximity effects and corrections to the dose exposure level and/or pixel location are calculated. The system includes apparatus for both calculation and storage of intermediate and final results as required. As they are calculated, the corrections are provided to an exposure dose modulator wherein they are applied to forming the pattern. Thus corrections for both long range and short range proximity effects due to both electron scattering and heating as well as for proximity effects due to global thermal expansion can be calculated and provided during run-time and a corrected pattern exposed.

Growing community of inventors

Castro Valley, CA, United States of America

Sergey Babin