Intel Corporation

Sergei L Voronov

Eric Jin Li

Christopher L Rumer

Yoshihiro Tomita

Edward Rudolph Prack

Rajen C Dias

Mihir A Oka

Tony Dambrauskas

George Vakanas

Lars D Skoglund

Danish Faruqui

David K Wilkinson, Jr

Dhruv P Bhate

Tao Wang

George K Chen

Rose Mulligan

Yuval Greenzweig

Shipeng Qiu

Luey Chon Ng

George E Malouf

Frank Evans

Sarita Evans

Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or 'inactive' side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Laser die backside film removal for integrated circuit (IC) packaging

Apparatus, systems, and methods are provided to generate markings on the surface of a die or substrate. The markings represent information. The markings can be annealed onto the surface of the die or substrate using a laser. Another embodiment can use an out-of-focus laser beam to mark a solder resist material.

Die or substrate marking using a laser

Apparatus, systems, and methods are provided to generate markings on the side of a substrate. The markings represent information. In an embodiment, the information provided in the markings may be used to collect information during an assembly process.

Substrate markings

Methods for concealing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture.

Work piece with concealed surface defects

The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.

Laser-assisted chemical singulation of a wafer

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a liquid on a region of a die, and then forming an identification mark through the liquid on the die.

Method of fabricating an identification mark utilizing a liquid film assisted by a laser

An integrated circuit package comprises a package substrate (), an electrically insulating material () adjacent to the package substrate, and a mark () on the electrically insulating material. The mark is such that a visual contrast between the mark and the electrically insulating material is maximized when the mark and the electrically insulating material are exposed to coaxial illumination. In one embodiment the electrically insulating material over the package substrate has a first surface roughness and a mark on the solder resist material has a second surface roughness that is no more than approximately twenty times greater than the first surface roughness.

Integrated circuit package having security feature and method of manufacturing same

Methods for removing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture.

Methods for concealing surface defects

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.

Laser assisted chemical vapor deposition for backside die marking and structures formed thereby

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Dual pulsed beam laser micromachining method

A laser micromachining method is disclosed wherein a workpiece is milled using an incident beam from a laser beam focused above the surface of the workpiece. The incident beam is guided by a plasma channel generated by the incident beam. The plasma channel, which has a relatively constant diameter over an extended distance, is generated by continual Kerr effect self-focusing balanced by ionization of air beam defocusing.

Laser micromachining method

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Growing community of inventors

Chandler, AZ, United States of America

Sergei L Voronov