The State University of New York

Other

US Government As Represented by the Secretary of the Army

Maxion Technologies, Inc.

The University of Texas System

Sri International

Serge Luryi

Mikhail Gouzman

Vera Gorfinkel

Gregory L Belenky

Michael A Gurvitch

Mitra Dutta

Michael A Stroscio

John D Bruno

Richard L Tober

Mikhail V Kisin

Sergey Suchalkin

Leon Shterengas

Thomas G Robertazzi

Sangmin Lee

Mikhail Kisin

Arsen Subashiev

Joseph H Abeles

Alexander Kastalsky

Ronald J Tonucci

John H Coleman

Mikhail A Belkin

Dmitri N Gavrilov

Satya Sharma

Bradley S Carlson

Peter Shkolnikov

Aleksandr Shabalov

Boris Spivak

Levon V Asryan

Saravut Charcranoon

Charles M Fortmann

Aleksandr Y Polyakov

Jeeho Sohn

A system of sensors associated with a branched conductor of an AC power line using the conductor as the communication medium between different sensors. The communication is carried out at frequencies higher than the powerline frequency. At least one sensor is provided in every branch in the vicinity of every branching point of the conductor. Synchronous measurements are carried out of the root mean square current passing through every branch of the conductor and the direction of energy flow in the branch. Results of the measurements are regularly reported throughout the system. An arrangement is provided for analyzing the results of the measurements to determine the graph topology of the branched conductor and ascertain the distribution of the root mean square current passing through every branch of the graph.

Sensors for power distribution network and electrical grid monitoring system associated therewith

A network of sensors is associated with a power distribution network. Sensors are positioned at each connecting line in the vicinity of each node of the power distribution network. The sensors regularly report the following measured data to the central processing unit: a geographical position of each sensor, direction of the energy flow relative to the nearest node; and value of RMS current synchronously measured over the entire network and averaged over chosen averaging period. The central processing unit includes an arrangement for receiving the measured data and using this data for constructing and updating a graph and a state of the power distribution network.

A scintillator detector of high-energy radiation comprising a semiconductor slab that is composed of alternating layers of barrier and well material. The barrier and well material layers are direct bandgap semiconductors. Bandgap of the well material is smaller than the bandgap of the barrier material. The combined thickness of the well layers is substantially less than the total thickness of said slab. The thickness of the barrier layers is substantially larger than the diffusion length of minority carriers. The thickness of the well layers is sufficiently large to absorb most of the incident scintillating radiation generated in the barrier layers in response to an ionization event from interaction with an incident high-energy particle.

Layered semiconductor scintillator

The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

Quantum cascade lasers with electrically tunable emission wavelengths

An article comprising a slab generating scintillation light in response to ionization event and formed with at least two sides. The ionization event is resulted from interaction of high-energy particles within a material of the slab between these sides. A photoreceiver sensitive to the scintillation light is integrated on each side of the slab in an optically-tight fashion. An arrangement is provided for analyzing signals resulted from the ionization event and generated by the photoreceivers. The photoreceivers and the analyzing arrangement are adapted for extracting a position of the ionization event within the slab material relative to the slab sides. A correcting arrangement is provided for correcting the signals and to provide attenuation of the scintillation light.

Slab scintillator with integrated double-sided photoreceiver

The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO(or doped VO) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously. Means for measuring of the sensor R(T) characteristic is provided together with the means of achieving and controlling the correct sensor positioning at the operating temperature inside one of these NHBs.

Bolometric sensor with high TCR and tunable low resistivity

The invention provides a design of PIN diode having a low capacitance and a large area of effective collection of photo-generated charge. The low capacitance is obtained by replacing a continuous collector layer in the diode by a sparse array of collector disks interconnected by narrow metallic runners at a different structural level separated from the collector discs by an interlevel dielectric.

Large-area PIN diode with reduced capacitance

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Semiconductor light source with electrically tunable emission wavelength

Uniaxially patterned (UAP) dielectric layers have an optical anisotropy that can be dynamically controlled. In a three-layer optical waveguide structure, the pattern can be included in the core or in a cladding layer. The pattern influences the polarization properties of radiation propagating in the structure. Predicated on the effect are devices such as a polarization-insensitive amplifier, a polarizer, an optically controlled polarization switch, and an optically controlled modal coupler.

Photonic waveguide device for modal control

An anisotropically conductive layer 'ACL' for mechanical and electrical bonding of two circuit containing structures, such as a flip chip and carrier is disclosed. The ACL is formed of a rigid insulating substrate or membrane with a top and bottom planar surfaces formed with a plurality of pins therein. The pins extend beyond the top and bottom surfaces so that a portion of each pin is exposed. The pins provide electrical connection between contact terminals or pads of the flip chip and carrier and additionally provide mechanical support between the flip chip and carrier so that the flip chip can undergo post-bonding processing without substantial deformation or breaking. A method of electrically and mechanically bonding the flip chip and carrier and a method of making a semiconductor device using the ACL is also disclosed.

Method and system for bonding a semiconductor chip onto a carrier using micro-pins

Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 &#x3bc;m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.

Intersubband semiconductor lasers with enhanced subband depopulation rate

A high-energy radiation detector is disclosed which uses a semiconductor material to absorb high-energy radiation and emit secondary light in response. The semiconductor is designed to be largely transparent for the interband light it emits so that the generated secondary photons can reach the semiconductor surface, to be detected by a suitable photo-detector. The semiconductor thus plays a role of a scintillator with the emitted light registered by a photo-detector. Two different device embodiments are disclosed. The first embodiment employs a uniform bulk slab of the appropriately chosen semiconductor, such as n-doped InP. Its principal advantage lies in the simplicity and low cost. The second device employs a multi-layer heterostructure. The principal advantage of the second type detector is the possibility of a substantial enhancement in the efficiency of absorption of the primary high-energy radiation. With appropriate modifications the disclosed detector can be used both for radiation monitoring, like a Gaiger counter, and for high-resolution analysis and characterization of the ionizing radiation.

Semiconductor scintillation high-energy radiation detector

An anisotropically conductive layer 'ACL' () for mechanical and electrical bonding of two circuit containing structures, such as a flip chip and carrier is disclosed. The ACL is formed of a rigid insulating substrate () or membrane () with a top and bottom planar surfaces formed with a plurality of pins therein. The pins extend beyond the top and bottom surfaces so that a portion of each pin is exposed. The pins provide electrical connection between contact terminals or pads of the flip chip and carrier and additionally provide mechanical support between the flip chip and carrier so that the flip chip can under go post-bonding processing without substantial deformation or breaking. A method of electrically and mechanically bonding the flip chip and carrier and a method of making a semiconductor device using the ACL is also disclosed.

In analyzing radiation from a communication link, single-photon counting can be used to advantage especially at low levels of radiation energy, e.g. in the detection of optical radiation. Preferred detection techniques include methods in which (i) received optical radiation is intensity-modulated in accordance with a preselected code, (ii) wherein it is the optical radiation which is intensity-modulated with the preselected code, and (iii) wherein the radiation modulated with a preselected code is received. For registration of the signals received by a sensing element of a single-photon detector, time of arrival is recorded, optionally in conjunction with registration of time intervals. Advantageously, in the interest of minimizing the number of pulses missed due to close temporal spacing of pulses, D-triggers can be included in counting circuitry.

Method and apparatus for detecting radiation

In analyzing radiation from a sample, single-quanta counting can be used to advantage especially at low levels of radiation energy, e.g. in the detection of fluorescent radiation. Preferred detection techniques include methods in which (i) fluorescence-stimulating radiation is intensity-modulated in accordance with a preselected code, (ii) wherein it is the fluorescent radiation which is intensity-modulated with the preselected code, and (iii) wherein modulation with a preselected code is applied to a sample to influence a property which functionally affects emitted fluorescent radiation. For registration of the signals from a sensing element of a single-photon detector, time of arrival is recorded, optionally in conjunction with registration of time intervals. Advantageously, in the interest of minimizing the number of pulses missed due to close temporal spacing of pulses, D-triggers can be included in counting circuitry.

Growing community of inventors

Old Field, NY, United States of America

Serge Luryi