Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stmicroelectronics (Crolles 2) Sas

Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique

Stmicroelectronics S.a.

Université Grenoble Alpes

Serge Blonkowski

Eric Jalaguier

Nicolas Guillaume

Emmanuel Defay

Christelle Charpin-Nicolle

Gabriele Navarro

Thomas Magis

Rémy Gassilloud

Diana Lopez

Julie Guillan

Patrice Gonon

This method comprises the following steps:

Method for manufacturing resistive memory cells

A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.

Filamentary type non-volatile memory device

A method is for measuring light energy received by a pixel including a transfer transistor, and a photodiode including a charge storage region. The method may include encapsulating the gate of the transfer transistor of the pixel in a semiconductor layer, at least one part of which includes a hydrogenated amorphous semiconductor. The method also may include grounding the charge storage region of the pixel, and determining the drift over time in the magnitude of the drain-source current of the transfer transistor.

Device and method for measuring light energy received by at least one photosite

The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses dand dof the amorphous and crystalline thin layers comply with the following general formulas: in which &#x2208;corresponds to the electric constant, &#x2208;and &#x2208;correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Ccorresponds to the total surface capacitance at zero field, and &#x3b3;and &#x3b3;correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.

High-stability thin-film capacitor and method for making the same

Growing community of inventors

Meylan, France

Serge Blonkowski