Oxford Instruments Analytical Oy

Oxford Instruments Technologies Oy

Seppo Nenonen

Heikki Sipilä

Hans Andersson

Pasi Antero Kostamo

Veikko Kämäräinen

Juha Kalliopuska

Juha Jouni Kalliopuska

A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.

Semiconductor detector with radiation shield

A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.

Method for patterning detector crystal using Q-switched laser

A gas tight radiation window membrane comprises a layered diffusion barrier with a reactive metal layer () covered on both sides by cover layers (). An originally continuous carrier layer () can be made a mesh that has openings coincident with openings of a reinforcement grid (), while the gas tight diffusion barrier () spans as a continuous film over said openings in said mesh.

Gas tight radiation window, and a method for its manufacturing

Growing community of inventors

Espoo, Finland

Seppo Nenonen