Samsung Electronics Co., Ltd.

Seowon Lee

Woojin Kim

Junghoon Bak

Junghwan Moon

Hyeongsun Hong

Nayoung Ji

A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

Variable resistance memory device

A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.

Growing community of inventors

Gwangmyeong-si, South Korea

Seowon Lee