Korea Institute of Energy Research

SeoungKyu Ahn

Ara Cho

Jihye Gwak

Sejin Ahn

Kee Shik Shin

Kyung Hoon Yoon

Jun Sik Cho

Joo Hyung Park

Jae Ho Yun

Young Joo Eo

Jae-ho Yun

Kee-Shik Shin

Kyung-Hoon Yoon

Jin Su Yoo

Jin-Su Yoo

Sang Hyun Park

Sang-hyun Park

Kihwan Kim

Young-joo Eo

Jun-sik Cho

Joo-hyung Park

Sung Woo Choi

Jin Su You

Guk-Yeong Jeong

Hisun Park

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a CuZnSnSthin film layer; forming a CuZnSn(S,Se)thin film layer; and forming a CuZnSnSthin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof

Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Device for controlling sample temperature during photoelectric measurement and solar cell measurement device using same

A method of fabricating an Ag&#x2014;(Cu&#x2014;)In&#x2014;Ga&#x2014;Se (A(C)IGS) based thin film using Se&#x2014;AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag&#x2014;(Cu&#x2014;)In&#x2014;Ga&#x2014;Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se&#x2014;AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se&#x2014;AgSe core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

A method for manufacturing a CI(G)S-based thin film using a Cu&#x2014;Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu&#x2014;Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu&#x2014;Se two-component nanoparticles by mixing the Cu&#x2014;Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu&#x2014;Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.

Method for manufacturing CI(G)S-based thin film comprising Cu-Se thin film using Cu-Se two-component nanoparticle flux, and CI(G)S-based thin film manufactured by the method

A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500&#xb0; C. to 600&#xb0; C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency.

Method of fabricating copper indium gallium selenide (CIGS) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (CIGS) thin film for solar cell fabricated by the same

Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSedue to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Method of forming chalcopyrite light-absorbing layer

Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

Ultra thin hit solar cell and fabricating method of the same

A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching. The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.

Method of forming zinc oxide prominence and depression structure and method of manufacturing solar cell using thereof

An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.

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Daejeon, South Korea

SeoungKyu Ahn