Hyundai Electronics Industries Co. Ltd.

Seoung Ouk Choi

Jin Gwan Shin

Sang Hoan Chang

Keon Soo Shim

There is disclosed a multi-bit flash memory cell and programming method using the same. In order to solve the problems that the size of a cell per unit is increased, reliability of a device is degraded due to a high operating voltage and a circuit necessary for driving the cell becomes complicated, the multi-bit flash memory cell and programming method using the same according to the present invention stores information of various states, by interchangeably programs a drain and a source in a cell array of virtual ground type, in a structure in which that two types of cells look like connected serially by doping a floating gate in a flash memory cell with two regions of a N type and a P to type.

Growing community of inventors

Kyungki-Do, South Korea

Seoung Ouk Choi