Samsung Electronics Co., Ltd.

Seonyong Lee

Minseok Kim

Hyunggon Kim

Joonsuc Jang

A method of operating a memory device, the method including: performing a first program operation to form a plurality of first threshold voltage distributions; and performing a second program operation by using a coarse verification voltage and a fine verification voltage based on offset information to form a plurality of second threshold voltage distributions respectively corresponding to a plurality of program states from the plurality of first threshold voltage distributions, wherein the offset information includes a plurality of offsets that vary according to characteristics of the second threshold voltage distributions.

Method of operating a memory device by performing a program operation using a coarse verification voltage and a fine verification voltage and a memory device and a memory system employing the same

Growing community of inventors

Hwaseong-si, South Korea

Seonyong Lee