Samsung Electronics Co., Ltd.

Seontaek Kim

Chanik Park

Hojun Shim

Kangho Roh

Wonmoon Cheon

Wonhee Cho

Jong Tae Park

Yang-sup Lee

Je-Hyuck Song

Youngjoon Choi

Moonwook Oh

Jaesoo Lee

Seung-Duk Cho

Jaehoon Heo

Young-Ho Park

Eun Ju Choi

Yonghwa Lee

Jesuk Yeon

Sil Wan Chang

In Hwan Doh

Yu-Hun Jun

Heechul Chae

A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

Storage device including nonvolatile memory device and controller, controller and operating method of nonvolatile memory device

An operation method of a memory controller which is configured to control a nonvolatile memory device includes receiving a command from the outside, calculating a delay time based on a currently available write buffer, a previously available write buffer, and a reference value, and processing the command based on the delay time.

Operation method of memory controller and operation method of storage device including the same

An operating method of a storage device including a nonvolatile memory and a memory controller configured to control the nonvolatile memory may include selecting one of a plurality of submission queues; fetching, from the selected submission queue, a command for accessing the storage device; executing the fetched command; outputting an execution result of the fetched command to a selected completion queue corresponding to the selected submission queue; determining whether a submission queue is a full submission queue, the full submission queue corresponding to a full completion queue; and inhibiting the selecting from selecting the full submission queue until the full completion queue becomes a normal completion queue, when the determining determines a submission queue is the full submission queue, wherein the plurality of submission queues are sequentially selected in accordance with round robin scheduling.

Storage device and operating method of the same

A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

Memory system and method of accessing a semiconductor memory device

One embodiment of a nonvolatile memory device includes a memory cell array including a plurality of multi-level cells, and a control unit configured to determine a characteristic of data to be stored in the memory cell array. The control unit is configured to select one of plural multi-bit programming methods based on the determination. Data is stored in the memory cell array according to the selected multi-bit programming method, and at least one of the plural multi-bit programming methods maintains least significant bit data when there is a program fail of most significant bit data.

Growing community of inventors

Suwon-si, South Korea

Seontaek Kim