Boe Technology Group Co., Ltd.

Beijing Boe Optoelectronics Technology Co., Ltd.

Beijing Boe Optoelectronics Co., Ltd.

Seongyeol Yoo

Youngsuk Song

Seungjin Choi

Heecheol Kim

Zhanfeng Cao

Qi Yao

Ke Fei Wang

Fan Yang

Jianshe Xue

Min Dong

Jianguo Wang

Shi Shu

Wei Yang

Ce Ning

Wei Xu

Xiaolong He

Yoonsung Um

Zhaohui Hao

Haiyu Zhao

Xiaoyang Tong

Jai-Il Ryu

Hyungsuk Choi

Wonseok Kim

Dohyeong Kim

Disclosed is an array substrate and a display device. The array substrate includes: a plurality of gate lines and a plurality of data lines formed on a base substrate, and a plurality of pixel units defined by the plurality of gate lines and the plurality of data lines intersecting each other, wherein each pixel unit includes a thin film transistor and a pixel electrode connected with the thin film transistor, the pixel electrode, the data line, as well as an active layer, a source and a drain of the thin film transistor are disposed in a same layer and are formed through a single patterning process.

Array substrate and display device

An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes: a gate electrode of a TFT and a gate insulation layer sequentially formed on a base substrate; a semiconductor active layer, an etch stop layer and a source electrode and a drain electrode of the TFT sequentially formed on a part of the gate insulation layer that corresponds to the gate electrode of the TFT, the source and drain electrodes of the TFT are respectively in contact with the semiconductor active layer by way of via holes. The array substrate further includes: a first insulation layer formed between the gate electrode of the TFT and the gate insulation layer and the gate electrode is in contact with the gate insulation layer at a channel region of the TFT between the source electrode and the drain electrode of the TFT.

Array substrate, method for fabricating the same and display device

The embodiments of the invention disclose an array substrate, a manufacturing method thereof and a display device. Due to the fact that the surfaces of a source electrode, a drain electrode and a data line which are arranged on the same layer are provided with an oxide film which is formed after annealing treatment is conducted on the source electrode, the drain electrode and the data line, in the process that the pattern of a pixel electrode is formed on the source electrode, the drain electrode and the data line by the adoption of a composition technology, the oxide film can protect the source electrode and the data line under the oxide film from being corroded by an etching agent when the pattern of the pixel electrode is formed by etching, and the display quality of a display panel will not be affected.

Array substrate having partially oxidized source electrode, drain electrode and data line

A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

Quantum dot ink

The invention relates to a method for fabricating an array substrate, an array substrate and a display device. The method for fabricating an array substrate may comprise: forming a pattern including a source electrode, a drain electrode and a data line; forming a non-crystalline semiconductor thin film layer; and performing annealing, so as to convert only the non-crystalline semiconductor thin film layer on the source electrode, drain electrode and data line to a metal semiconductor compound. By converting only the non-crystalline semiconductor thin film layer on the source electrode, drain electrode and data line into a metal semiconductor compound, the resulting metal semiconductor compound may prevent oxidative-corrosion of the metal thin film layer, such as a low-resistance metal (e.g., Cu or Ti) layer, in the subsequent procedures, which is favorable for the fabrication of a metal oxide thin film transistor using Cu or Ti.

Method for fabricating array substrate, array substrate and display device

The present invention provides an open head mount display device and a display method thereof, relates to the field of head mount display technology, and can solve technical problems (such as a tedious operation, a poor display effect, an inaccurate position of the display image or the like) of the open head mount display device in the prior art. The open head mount display device of the present invention comprises: a display unit for providing a display image to user's eyes; an image acquisition unit for acquiring an image of an external object; an image analysis unit for analyzing and determining a position of the external object relative to the user's eyes in accordance with the image acquired by the image acquisition unit; and an image adjusting unit for adjusting the display image in accordance with an analysis result of the image analysis unit.

Open head mount display device and display method thereof

An array substrate, a manufacturing method thereof and a display device are provided. The array substrate comprises a base substrate (), an organic light-emitting diode (OLED) device and a thin-film transistor (TFT) structure, the OLED device disposed on one side of the base substrate (); the TFT structure disposed on the other side of the base substrate (); a through hole formed on the base substrate and provided with a conductive bridge (); and the OLED device connected with the TFT structure through the conductive bridge (). The array substrate can avoid electrical interference of the TFT structure on the OLED device, and hence accurate drive for the OLED device can be achieved; as the OLED device can be directly formed on a surface of the base substrate, surface treatment of a pixel electrode is saved with respect to conventional OLED display device, and hence manufacturing process can be accelerated and manufacturing cost can be reduced; and as both an anode and a cathode of the OLED device are made from transparent materials, double-sided light emission can be achieved in the array substrate, and hence double-sided display can be achieved in the array substrate.

Method of manufacturing array substrate having OLED connected to TFT substrate with a conductive bridge

Disclosed is an array substrate, a method of manufacturing the same, and a display device. The method of manufacturing an array substrate includes: forming a pattern comprising an active layer, a source, a drain, a data line and a pixel electrode on a base substrate through a single patterning process; forming a pattern of an insulating layer; forming a pattern comprising a gate and a gate line through a single patterning process. In the array substrate, the method of manufacturing the same, and the display device of the present invention, only two patterning processes are required to achieve the fabrication of the array substrate, which has less and simple process steps, thereby reduces the manufacturing complexity and manufacturing cost, and increasing the production efficiency and the economic benefit.

Array substrate, method of manufacturing the same, and display device

The present invention relates to a method for manufacturing a thin film transistor and an array substrate, and corresponding devices. In the thin film transistor manufacturing process, the base substrate is annealed after the formation of the patterns of the active layer, the source and the drain in the thin film transistor, so as to thermally diffuse ions of the source and the drain at an ohmic contact between the active layer and the source, as well as the drain, to the active layer, and further to provide the active layer with ions of the source and the drain for changing the components of the active layer, which reduces the resistance at the ohmic contact between the active layer and the source, as well as the drain, and guarantees the uniformity and reliability of the thin film transistor. Moreover, annealing treatment is relatively simpler in implementation as compared with the plasma treatment, and will not increase the complexity of the method for manufacturing the entire thin film transistor, which is good for thin film transistor production efficiency.

Method for manufacturing a thin film transistor and an array substrate, and corresponding devices

The invention relates to a method for fabricating an array substrate, an array substrate and a display device. The method for fabricating an array substrate may comprise: forming a metal thin film layer for a source electrode, a drain electrode and a data line; forming a non-crystalline semiconductor thin film layer on the metal thin film layer; and performing annealing, so as to at least partly convert the non-crystalline semiconductor thin film layer into a metal semiconductor compound. By at least partly converting the non-crystalline semiconductor thin film layer into a metal semiconductor compound, the resulting metal semiconductor compound may prevent oxidative-corrosion of the metal thin film layer, such as a low-resistance metal (e.g., Cu or Ti) layer, in the subsequent procedures, which is favorable for the fabrication of a metal oxide thin film transistor using Cu or Ti.

An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises a gate line and a data line intersecting with each other. The data line and the gate line are formed in a same layer on a substrate, the data line is disconnected in a region of the gate line. A connection pattern is formed in the region of the gate line, the connection pattern is insulated from the gate line, and ends of the data line located on both sides of the gate line are electrically connected by the connection pattern.

Array substrate and fabrication method thereof, and display device

An array substrate and a display device, the array substrate comprises a fan-out area, an edge area and a display area for performing display, the fan-out area and the edge area are connected with the display area and located on two non-adjacent sides of the display area respectively; a plurality of wirings are arranged on the array substrate, and the wirings are routed through the display area and extend into the edge area, the input end of each wiring is located in the fan-out area; pads are configured for the wirings respectively are located on the side far away from the input end of each wiring, and the pads are located in the edge area.

A manufacturing method of a thin film transistor, a manufacturing method of an array substrate and an array substrate are provided. The manufacturing method of the thin film transistor comprises: forming an active layer, a source electrode and a drain electrode on a substrate by one patterning process, the active layer, the source electrode and the drain electrode being located in a same layer. The manufacturing method of the thin film transistor can effectively reduce the number of patterning processes, so as to enhance the capacity in mass production, and reduce the cost.

Manufacturing method of thin film transistor, manufacturing method of array substrate and array substrate

The present invention provides an array substrate fabricating method. The array substrate fabricating method comprises the steps of: forming a semiconductor material layer and a first photoresist layer on a substrate successively, forming a pattern of an active layer comprising thin film transistors by using the semiconductor material layer and the first photoresist layer through photoetching technology, and reserving the first photoresist layer at least on conductive areas of the active layer when the thin film transistors are turned on; and forming a first material layer on the substrate on which the active layer is formed and the first photoresist layer is reserved on the active layer, and forming a pattern comprising first structures by using the first material layer through the photoetching technology. The method is adapted for fabricating an array substrate using metal oxide thin film transistors.

Array substrate fabricating method

An embodiment of the present invention provides an array substrate, its manufacturing method and a display device. The method for manufacturing the array substrate comprises forming a common electrode with a slit structure on a substrate, and a pixel electrode with a slit structure not overlapping the common electrode. According to the present invention, it is able to reduce storage capacitance between the common electrode and the pixel electrode, thereby to ensure the image quality.

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Beijing, China

Seongyeol Yoo