Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Seongwoon Choi

Jinhong Park

SoonHo Kim

Seongyong Moon

Seokhwan Oh

Sangwook Kim

Sungwoo Lee

Yool Kang

Sang Ouk Kim

Dong Ki Yoon

So-Ra Han

Shiyong Yi

Kyoungseon Kim

Soohan Choi

Seongho Moon

SungSoo Suh

Jin-sun Choi

Seung Hak Park

HyoungHee Kim

YongJin Chun

Sukjoo Lee

Youngchang Kim

A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.

Methods of forming fine patterns of semiconductor device

Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern.

Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern

Methods of forming masks. According to the methods, a target pattern is set. Generation of a side lobe caused by the target pattern is verified. A preliminary target pattern and a preliminary side lobe pattern are set, in the target pattern and a region where the side lobe is generated, respectively. An interference pattern map using the preliminary target pattern and the preliminary side lobe pattern is created. At least one of regions having a phase identical or opposite to that of a position of the preliminary target pattern in the interference pattern map is set to an interference auxiliary pattern. A mask using the interference auxiliary pattern and the target pattern is formed.

Masks and methods of forming the same

A photomask for patterning an integrated circuit device using a patterning radiation may include a transparent substrate, a pattern of radiation blocking regions, an array of radiation blocking regions, and an array of shadowing elements. The transparent substrate may have first and second opposing surfaces, and the pattern of radiation blocking regions may be on at least one of the first and/or second surfaces of the transparent substrate. Moreover, the pattern of radiation blocking regions may define a pattern to be transferred to the integrated circuit substrate. The array of shadowing elements may be provided within the transparent substrate between the first and second opposing surfaces wherein a shadowing element of the array has a light transmittance characteristic different than that of an adjacent portion of the transparent substrate. Moreover, a transmittance of the patterning radiation through a portion of the transparent substrate including the array of shadowing elements may be greater than approximately 20%. Related methods and systems are also discussed.

Methods of patterning using photomasks including shadowing elements therein and related systems

Patterning systems using photomasks including shadowing elements therein

Photomasks including shadowing elements therein and related methods and systems

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Suwon-si, South Korea

Seongwoon Choi