Stats Chippac Pte. Ltd.

SeongWon Park

KyungHoon Lee

KiYoun Jang

JaeHyun Lee

A semiconductor device has a semiconductor die with an insulation layer formed over an active surface of the semiconductor die. A conductive layer is formed over the first insulating layer electrically connected to the active surface. A plurality of conductive pillars is formed over the conductive layer. A plurality of dummy pillars is formed over the first insulating layer electrically isolated from the conductive layer and conductive pillars. The semiconductor die is mounted to a substrate. A height of the dummy pillars is greater than a height of the conductive pillars to maintain the standoff distance between the semiconductor die and substrate. The dummy pillars can be formed over the substrate. The dummy pillars are disposed at corners of the semiconductor die and a central region of the semiconductor die. A mold underfill material is deposited between the semiconductor die and substrate.

Semiconductor device and method of forming dummy pillars between semiconductor die and substrate for maintaining standoff distance

A semiconductor device includes a semiconductor die. An interconnect structure is formed over an active surface of the semiconductor die. An encapsulant is formed over the semiconductor die and interconnect structure including a first surface opposite the interconnect structure. A peripheral portion of the first surface includes a first roughness disposed outside a footprint of the semiconductor die. A semiconductor die portion of the first surface includes a second roughness less than the first roughness disposed over the footprint of the semiconductor die. The first surface of the encapsulant is disposed within a mold and around the semiconductor die to contact a surface of the mold that includes a third roughness equal to the first roughness and a fourth roughness equal to the second roughness. The first roughness includes a roughness of less than 1.0 micrometers. The second roughness includes a roughness in a range of 1.2-1.8 micrometers.

Semiconductor device and method of forming reduced surface roughness in molded underfill for improved C-SAM inspection

A semiconductor device has a semiconductor die mounted to a substrate. A plurality of conductive pillars is formed over a semiconductor die. A plurality of conductive protrusions is formed over the conductive pillars. Bumps are formed over the conductive protrusions and conductive pillars. Alternatively, the conductive protrusions are formed over the substrate. A conductive layer is formed over the substrate. The semiconductor die is mounted to the substrate by reflowing the bumps at a temperature that is less than a melting point of the conductive pillars and conductive protrusions to metallurgically and electrically connect the bumps to the conductive layer while maintaining a fixed offset between the semiconductor die and substrate. The fixed offset between the semiconductor die and substrate is determined by a height of the conductive pillars and a height of the conductive protrusions. A mold underfill material is deposited between the semiconductor die and substrate.

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Kyoungki-do, South Korea

SeongWon Park