International Business Machines Corporation

Seongwon Kim

Daniel Joseph Friedman

Bipin Rajendran

Chung H Lam

Dharmendra S Modha

Daniel Mark Dreps

Jose A Tierno

Michael Sperling

Franco Stellari

Herschel Akiba Ainspan

Alan Weger

Mohit Kapur

Hector Saenz

Keith Aelwyn Jenkins

Yong Liu

Louis L Hsu

Alper Buyuktosunoglu

Pradip Bose

Kai D Feng

Edmund Juris Sprogis

Frank David Ferraiolo

Hans Mikael Jacobson

John Francis Bulzacchelli

Howard Hao Chen

Glen Arthur Wiedemeier

Paul David Muench

Norman Karl James

Huajun Wen

Zeynep Toprak Deniz

Joshua D Friedrich

John R Ripley

One embodiment relates to a neuromorphic network including electronic neurons and an interconnect circuit for interconnecting the neurons. The interconnect circuit includes synaptic devices for interconnecting the neurons via axon paths, dendrite paths and membrane paths. Each synaptic device includes a variable state resistor and a transistor device with a gate terminal, a source terminal and a drain terminal, wherein the drain terminal is connected in series with a first terminal of the variable state resistor. The source terminal of the transistor device is connected to an axon path, the gate terminal of the transistor device is connected to a membrane path and a second terminal of the variable state resistor is connected to a dendrite path, such that each synaptic device is coupled between a first axon path and a first dendrite path, and between a first membrane path and said first dendrite path.

Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devices

Aspects include a method for generating a signal in response to an event. The method includes receiving, from a clock signal generator, a clock signal, wherein the clock signal has a fixed clock period. The method further includes receiving an indication of a pulse and, responsive to receiving the indication of the pulse, generating an output comprising a high voltage having a starting time and an ending time. The starting time is a first time when the indication of the asynchronous event is received, and the ending time is a second time at one fixed clocked period from the starting time.

Global timing generator

An apparatus for providing a local reference voltage for a voltage regulator includes a reference capacitor configured to provide the local reference voltage, a charge pump configured to push current to, or pull current from, the reference capacitor according to one or more control inputs received by the charge pump, and a boosting circuit configured to add or subtract a discrete quantity of charge to the reference capacitor according to one or more boosting control signals. A boosting control circuit may be configured to disconnect a boosting capacitor from the reference capacitor during a first phase of a control cycle and connect the boosting capacitor to the reference capacitor during a second phase of the control cycle. The boosting capacitor may be pre-charged (to add charge) or discharged (to subtract charge) during the first phase of the control cycle. A corresponding method is also disclosed herein.

Dynamic voltage regulation

Embodiments of the invention relate to a neuromorphic network for producing spike-timing dependent plasticity. The neuromorphic network includes a plurality of electronic neurons and an interconnect circuit coupled for interconnecting the plurality of electronic neurons. The interconnect circuit includes plural synaptic devices for interconnecting the electronic neurons via axon paths, dendrite paths and membrane paths. Each synaptic device includes a variable state resistor and a transistor device with a gate terminal, a source terminal and a drain terminal, wherein the drain terminal is connected in series with a first terminal of the variable state resistor. The source terminal of the transistor device is connected to an axon path, the gate terminal of the transistor device is connected to a membrane path and a second terminal of the variable state resistor is connected to a dendrite path, such that each synaptic device is coupled between a first axon path and a first dendrite path, and between a first membrane path and said first dendrite path.

Methods for testing the resolution of an imaging device include forming a plurality of semiconductor devices having proximal light emitting regions, such that the light emitting regions are grouped into distinct shapes separated by a distance governed by a target resolution size. The semiconductor devices are activated by providing an input signal. Light emissions from one or more of the activated semiconductor devices are suppressed by providing one or more select signals.

Minimum-spacing circuit design and layout for PICA

PICA test methods are shown that includes forming semiconductor devices having proximal light emitting regions, such that the light emitting regions are grouped into distinct shapes separated by a distance governed by a target resolution size; forming logic circuits to control the semiconductor devices; activating the one or more semiconductor devices by providing an input signal; and suppressing light emissions from one or more of the activated semiconductor devices by providing one or more select signals to the logic circuits.

PICA test circuits are shown that include a first transistor and a second transistor laid out drain-to-drain, such that a gap between respective drain regions of the first and second transistors has a minimum size allowed by a given fabrication technology.

A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.

Compact low-power asynchronous resistor-based memory read operation and circuit

A voltage regulator module (VRM) includes a first interface configured to couple to a first substrate interface at a first voltage. The VRM also includes a second interface configured to couple to a first processor interface at a second voltage. A first regulator module couples to the first interface and to the second interface. The first regulator module is configured to receive power at the first interface, to convert power to the second voltage, and to deliver power to the first processor interface at the second voltage. A method for providing power to a processor includes receiving power from a first substrate interface at a first voltage. The received power is regulated to generate power at a second voltage. The regulated power is provided to a processor at a first processor interface coupled to the processor. The processor interface delivers power to a logic group of a plurality of logic groups of the processor.

Processor voltage regulation

Mechanisms are provided for either power gating or bypassing a voltage regulator. Responsive to receiving an asserted power gate signal to power gate the output voltage of the voltage regulator, at least one of first control circuitry power gates the output voltage of a first circuit or second control circuitry power gates the output voltage of a second circuit such that substantially no voltage to is output by the first circuit to a primary output node. Responsive to receiving an asserted bypass signal to bypass the output voltage of the voltage regulator, at least one of the first control circuitry bypasses the output voltage of the first circuit or the second control circuitry bypasses the output voltage of a second circuit such that substantially the voltage of a voltage source is output by the first circuit to the primary output node.

Voltage regulator module with power gating and bypass

A high-density deep trench capacitor array with a plurality of leakage sensors and switch devices. Each capacitor array further comprises a plurality of sub-arrays, wherein the leakage in each sub-array is independently controlled by a sensor and switch unit. The leakage sensor comprises a current mirror, a transimpedance amplifier, a voltage comparator, and a timer. If excessive leakage current is detected, the switch unit will automatically disconnect the leaky capacitor module to reduce stand-by power and improve yield. An optional solid-state resistor can be formed on top of the deep trench capacitor array to increase the temperature and speed up the leakage screening process.

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Old Tappan, NJ, United States of America

Seongwon Kim