Samsung Electronics Co., Ltd.

Seongui Seo

Gwanhyeob Koh

Yongkyu Lee

Boyoung Seo

Taehyun Kim

Chankyung Kim

Sangjung Jeon

A memory device including: a memory cell array including a memory cell, the memory cell configured to store first data based on a first write current; a write driver configured to output the first write current based on a control value; and a current controller including a replica memory cell, the current controller configured to generate the control value based on a state of second data which is stored in the replica memory cell, wherein an intensity of the first write current is adjusted based on the control value.

Memory device operating based on a write current for a given operation condition and a method of driving the write current

A magnetic memory device includes a substrate, a landing pad on the substrate, first and second magnetic tunnel junction patterns disposed on the interlayer insulating layer and spaced apart from the landing pad when viewed from a plan view, and an interconnection structure electrically connecting a top surface of the second magnetic tunnel junction pattern to the landing pad. A distance between the landing pad and the first magnetic tunnel junction pattern is greater than a distance between the first and second magnetic tunnel junction patterns, and a distance between the landing pad and the second magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, when viewed from a plan view.

Magnetic memory devices

Growing community of inventors

Suwon-si, South Korea

Seongui Seo