Yonsei University

Samsung Electronics Co., Ltd.

Skhynix Inc.

Seongook Jung

Taemin Choi

Keonhee Cho

Byongmo Moon

Taehyun Kim

Jiyoung Kim

Jung-Hyun Park

Kyoman Kang

Hanwool Jeong

Kyung Ho Ryu

Dong Hun Jung

Juhyun Park

Young Hwi Yang

Sungho Park

Seung Ho Lee

Hyunjun Kim

Jongsoo Lee

Dong Hoon Jung

Taeryeong Kim

Jeonghyeok You

Wonjoon Jo

Giseok Kim

Hong Hyun Choi

Jungchan Lee

Heekyung Choi

Hohyun Chae

Sekeon Kim

Kyeongrim Baek

A memory cell array of an SRAM including: a top memory cell array including top memory cells; and a bottom memory cell array including bottom memory cells, the top memory cells include: a first top memory cell between a power supply voltage and a middle node, and connected to a first top wordline, a first top bitline and a first top complementary bitline, the bottom memory cells include: a first bottom memory cell to operate with the first top memory cell, connected between the middle node and a ground voltage, and connected to a first bottom wordline, a first bottom bitline and a first bottom complementary bitline, and when write and read operations are not performed on the first top and bottom memory cells, the first top bitline, the first top complementary bitline, the first bottom bitline and the first bottom complementary bitline are connected to the middle node.

Memory cell array of a static random access memory and a static random access memory including the same

A memory device accessed by circuits operating based on a first supply voltage. The memory device includes a cell array electrically connected to a plurality of word lines and a plurality of bit lines; a row driver configured to select one word line of the plurality of word lines based on a row address; a precharge circuit configured to precharge the plurality of bit lines based on the first supply voltage; a column driver configured to select at least one bit line of the plurality of bit lines based on a column address; and a read circuit configured to read data stored in the cell array through the at least one bit line. The cell array, the row driver, the column driver, and the read circuit operate based on a second supply voltage, which is higher than the first supply voltage.

Memory device using a plurality of supply voltages and operating method thereof

A transmitter circuit of an interface circuit includes a clock generating circuit, a pulse generating circuit, an overlapped multiplexing circuit, and an output circuit. The clock generating circuit generates a plurality of clocks having different phases. The pulse generating circuit generates a plurality of pulses based on the plurality of clocks. The overlapped multiplexing circuit receives a plurality of input signals in parallel, and sequentially outputs a plurality of overlapped signals based on the plurality of clocks, the plurality of input signals, and the plurality of pulses, and each overlapped signal includes bit values of two input signals among the plurality of input signals. The output circuit serially outputs bit values of the plurality of input signals in series based on the plurality of overlapped signal.

Transmitter circuit and receiver circuit of interface circuit and operating method thereof

An error handling device includes a cross-voltage sense amplifier and an error handling circuit. The cross-voltage sense amplifier is configured to perform a normal sense operation and a cross sense operation. The normal sense operation generates normal sense data by providing an input voltage and a comparison voltage to first and second inputs of a comparator, respectively. The cross sense operation generates cross sense data by providing the input voltage and the comparison voltage to the second and first inputs of the comparator, respectively. The error handling circuit identifies a location of an error using the normal sense data and the cross sense data and corrects the error.

Error handling device, semiconductor memory device including the same, and error handling method including cross sensing operation

An apparatus for correcting an error of a clock signal may include a phase adjuster that corrects an error of half-rate clock signals based on an error correction signal to output an error-corrected clock signal, a phase splitter that outputs quadrature clock signals from the error-corrected clock signal, an error detector that outputs an internal clock signal based on one of the quadrature clock signals, selects two quadrature clock signals among the quadrature clock signals based on a clock selection signal, and detects errors of the two quadrature clock signals based on an error check signal to output a correction request signal, and a controller that outputs a mode selection signal and the clock selection signal based on the internal clock signal and that outputs the error correction signal and the error check signal based on the mode selection signal, the clock selection signal, and the correction request signal.

Apparatus for correcting error of clock signal

An integrated circuit includes: a cell array including a plurality of memory cells in a plurality of first columns and including a plurality of word line assist cells in at least one second column; a plurality of word lines respectively extending on a plurality of first rows of the cell array and connected to the plurality of memory cells and the plurality of word line assist cells; and a row driver configured to drive the plurality of word lines.

Integrated circuit including cell array with word line assist cells

An integrated circuit includes: a cell array including a plurality of memory cells in a plurality of first rows and a plurality of write assistance cells in at least one second row; a plurality of word lines respectively extending on the plurality of first rows; at least one write assistance line respectively extending on the at least one second row; and a row driver connected to the plurality of word lines and the at least one write assistance line, the row driver being configured to, during a write operation, activate at least one of the plurality of write assistance cells through the at least one write assistance line, wherein each of the plurality of write assistance cells includes the same transistor configuration as each of the plurality of memory cells and has the same footprint as each of the plurality of memory cells.

Integrated circuit including cell array with write assist cell

An integrated circuit memory device includes a static random access memory (SRAM) cell, and a charge storing circuit electrically coupled to the SRAM cell. A switching controller is provided, which is electrically coupled to the charge storing circuit. The switching controller and the charge storing circuit are collectively configured to save power by recycling charge associated with a bit line electrically coupled to the SRAM cell by: (i) transferring charge from the bit line to a charge storage node electrically coupled to source terminals of a pair of NMOS pull-down transistors within the SRAM cell upon commencement of a SRAM cell write operation, and then (ii) returning at least a portion of the charge to the bit line upon completion of the SRAM cell write operation.

Static random access memory (SRAM) devices and methods of operating the same

A transmitter includes a multiplexer, control logic and a voltage mode driver. The multiplexer generates a plurality of time-interleaved data signals based on a plurality of input data signals and multi-phase clock signals. The plurality of input data signals are input in parallel. Each of the plurality of input data signals is a binary signal and has two voltage levels that are different from each other. The control logic generates at least one pull-down control signal and a plurality of pull-up control signals based on the plurality of time-interleaved data signals. Each of the plurality of pull-up control signals has a voltage level that is temporarily boosted. The voltage mode driver generates an output data signal based on the at least one pull-down control signal and the plurality of pull-up control signals. The output data signal is a duobinary signal and has three voltage levels that are different from each other.

Transmitter and receiver for low power input/output and memory system including the same

Provided is a DC-DC converter implemented in a small area with a fast transient response. The DC-DC converter includes: a power supply unit configured to supply an input voltage; an inductor connected between an output terminal where an output voltage is outputted and the power supply unit; an emulator connected to both ends of the inductor to generate a feedback voltage; and a control circuit configured to control the power supply unit through a time domain control based on the output voltage and the feedback voltage.

DC-DC converter

The present disclosure herein relates to a sense amplifier and a semiconductor memory device employing the same. The sense amplifier includes an inverter including a pull-up transistor and a pull-down transistor, and a switching unit configured to change a connection relationship between the pull-up transistor and the pull-down transistor according to whether an input terminal of the inverter is precharged or a signal applied to the input terminal is sensed.

Sense amplifier and semiconductor memory device employing the same

Disclosed is a memory device. The memory device includes a bit-cell comprising a cross-coupled inverter and pass gate transistor connected to data storage node of the cross-coupled inverter, a read buffer transistor having a drain terminal connected to a bit line for read operation and a gate terminal connected to the pass gate transistor, a write operation transistor connected between the pass gate transistor and a bit line for write operation, and a drive transistor unit which is connected to a local line between the pass gate transistors and the write operation transistor and which provide a voltage to a gate terminal of the read buffer transistor based on a data value stored at the bit-cell.

Memory device

A time-to-digital converter includes a first gated ring oscillator, a second gated ring oscillator, a phase adjusting unit, and a digital converter unit. The first gated ring oscillator includes a plurality of first delay cells connected in a cyclic structure and operating in response to an enable signal. The second gated ring oscillator includes a plurality of second delay cells connected in a cyclic structure and operating in response to the enable signal. The phase adjusting unit adjusts a phase of a second circulation signal circulating in the second gated ring oscillator so as for the second circulation signal to have a predetermined phase difference with respect to a first circulation signal circulating in the first gated ring oscillator. The digital converter unit samples output signals of the first delay cells and the second delay cells to output a digital value corresponding to duration of the enable signal.

Time-to-digital converter

A delay locked loop in accordance with some embodiments of the inventive concept may include a delay signal generation part generating a first delay signal having a first phase and a second delay signal having a second phase by delaying a reference signal on the basis of a delay control signal; a phase synthesizing part generating at least one third signal having a third phase using the first delay signal and the second delay signal; and a phase detection part generating a control code by comparing the reference signal with each of the first delay signal, the second delay signal and the third signal.

Growing community of inventors

Seoul, South Korea

Seongook Jung