Lg Electronics Inc.

Lg Magna E-Powertrain Co., Ltd.

Seongmoo Cho

Kwangsoo Kim

Taehoon Jang

Eujin Hwang

Siho Choi

Gun Lee

Junho Kim

Oksun Yu

Jaemoo Kim

Kwangchoong Kim

A power module is disclosed. A power module according to an embodiment of the present disclosure may include a first substrate and a second substrate spaced apart from each other, an electronic device unit provided on at least either one of the first and second substrates, and a lead frame unit provided between the first and second substrates. One side of the lead frame unit may be connected to an external circuit, and the other side thereof may be configured to electrically connect the first and second substrates. Accordingly, the lead frame unit may perform a function of electrically connecting the first and second substrates instead of a via spacer in the related art.

Power module including lead frame unit connecting first substrate and second substrate

A power module according implementations of the present disclosure includes a bonding layer for bonding two adjacent members. The bonding layer is formed by melting, applying, and solidifying a bonding material that has excellent thermal conductivity and electrical conductivity. The melted bonding material includes a plurality of anti-tilting members. The two members bonded during the process of solidifying the melted bonding material are supported by the plurality of anti-tilting members. This may allow tilting caused during the formation of the bonding layer to be suppressed.

Power module of double-faced cooling

A device for power factor correction can include a converter housing having an inner surface; a first converter substrate mounted on the inner surface of the converter housing; a second converter substrate mounted on another surface of first converter housing opposite to the inner surface; and a housing cover covering the first converter substrate and coupled to an upper surface of the converter housing, in which the second converter substrate includes a first surface having a first region including a source pad, and a second region including a drain pad spaced apart from the source pad, the source pad including a source pad extension portion extending into the second region; and a second surface including a heat dissipation pad for communicating heat from the source and drain pads to an outside of the device, in which the first region of the second converter substrate overlaps with the another surface of first converter housing, and the second region of the second converter substrate faces the housing cover without overlapping with the first converter substrate.

Device for power factor correction

This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FeNlayers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof. To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a portion of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FeNlayers interposed between the plurality of GaN layers.

Nitride semiconductor and fabricating method thereof

A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SiNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Nitride semiconductor device and fabricating method thereof

A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

Growing community of inventors

Seoul, South Korea

Seongmoo Cho