Samsung Electronics Co., Ltd.

Sungkyunkwan University

Seoul National University

Intel Corporation

Harvard College

Yonsei University

Bear Robotics, Inc.

Seongjun Park

Hyeonjin Shin

Jaeho Lee

Jinseong Heo

Kiyoung Lee

Sangwon Kim

Seunggeol Nam

Hyunjae Song

Yeonchoo Cho

Eunkyu Lee

Minhyun Lee

Minsu Seol

Seongjun Jeong

Keunwook Shin

Dongwook Lee

Haeryong Kim

Sanghyun Jo

Yunseong Lee

Changseok Lee

Sangyeob Lee

Taeho Kim

Sanghun Lee

Changhyun Kim

Alum Jung

Kyungeun Byun

Tahir Ghani

Jungwon Lee

Jisoo Kyoung

Hanjin Lim

Michael G Haverty

Sadasivan Shankar

Shuangquan Wang

Kibum Kim

Yunho Kang

Sangmin Lee

Kyung-Eun Byun

Hyun Soo Park

Hyeon Jin Shin

Hongkun Park

Dong-Hyun Im

Chang Seok Lee

Hyun Uk Park

Donhee Ham

Ki-bum Kim

Hyangsook Lee

Philip Kim

Jongmyeong Lee

Eunsung Kim

Hyoungsub Kim

Hyena Kwak

Jungju Oh

Donghyun Im

Wonjong Yoo

Woojong Yu

Jaehyun Yang

Hoojeong Lee

Xiaochi Liu

Changho Ra

Zheng Yang

Yongseon Shin

Tae-Kyung Hong

Yeo Jin Jung

Yunhho Kang

Soongun Lee

Jaeyeol Hwang

Sungwng Kim

Faisal Ahmed

A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

Semiconductor device including metal-2 dimensional material-semiconductor contact

Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

Semiconductor device including graphene and method of manufacturing the semiconductor device

Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

Wiring structure and electronic device employing the same

Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

Image sensor for high photoelectric conversion efficiency and low dark current

According to one aspect of the invention, there is provided a method for generating a map for a robot, the method comprising the steps of: acquiring a raw map associated with a task of the robot; identifying pixels estimated to be a moving obstacle in the raw map, on the basis of at least one of colors of pixels specified in the raw map and sizes of areas associated with the pixels; and performing dilation and erosion operations on the pixels estimated to be the moving obstacle, and determining a polygon-based contour of the moving obstacle.

Method, system, and non-transitory computer-readable recording medium for generating a map for a robot

The present invention is a method to determine an azimuthal orientation of a borehole seismometer sensor performed by a computing device using a control server having a database and an arithmetic function, the computing device performing a method to determine the azimuthal orientation of a borehole seismometer sensor using long-period surface waves in microseisms, including step Sin which a data collection unitcollects continuous waveform data recorded by a borehole seismometer and a reference seismometer; step Sin which a frequency band setting unitsets a frequency band to be analyzed in the collected continuous waveform data; step Sin which a filtering unitperforms bandpass filtering on the frequency band to be analyzed; step Sin which a waveform dividing unitdivides seismic waveform into waveform segments with preset time units; step Sin which a phase shift unitshifts the phase of the divided vertical component waveforms by 90&#xb0;; step Sin which a waveform calculation unitcombines the divided N' and E&#x2032; component seismic waveforms to calculate horizontal components for rotation angles waveform between 0 and 360&#xb0; from the N&#x2032; orientation; step Sin which a correlation calculation unitcalculates a correlation coefficient between the horizontal and vertical component waveforms; step Sin which a Rayleigh wave orientation determination unitrepeats steps Sto Sfor each divided time domain; step Sin which an orientation comparison unitperforms steps Sto S, respectively, with respect to the borehole seismometer data for which the sensor orientation is to be determined and the reference seismometer data for which the sensor orientation is already known; and step Sin which a result calculation unitaverages &#x3b8; determined for each time period to calculate a final result.

Method and system to determine the azimuthal orientation of borehole seismometer sensor using long period surface waves in microseisms

Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

Layer structure including diffusion barrier layer and method of manufacturing the same

A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

Optical sensor and image sensor including graphene quantum dots

A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

Broadband multi-purpose optical device and methods of manufacturing and operating the same

A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

Nonvolatile memory apparatus including resistive-change material layer

Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device

Growing community of inventors

Seoul, South Korea

Seongjun Park