Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Sungkyunkwan University

Seongjun Jeong

Seongjun Park

Hyeonjin Shin

Sangwon Kim

Yunseong Lee

Minsu Seol

Dongwook Lee

Alum Jung

Minhyun Lee

Jaeho Lee

Changseok Lee

Keunwook Shin

Seunggeol Nam

Hyunjae Song

Hyoungsub Kim

Hyowon Kim

Hyena Kwak

Donggyu Kim

Jiyeon Ku

Jaehyun Yang

Wonhee Ko

Hoojeong Lee

Seunghwa Ryu

A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles

Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. 

Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition

A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250&#xb0; C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition

Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M&#x2014;O&#x2014;C bond or an M&#x2014;C bond, where M is a metal element, O is oxygen, and C is carbon.

Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition

A pellicle composition for a photomask, a pellicle for a photomask, the pellicle for a photomask being formed from the pellicle composition, a method of forming the pellicle, a reticle including the pellicle, and an exposure apparatus for lithography including the reticle are provided. The pellicle composition includes: at least one selected from graphene quantum dots and a graphene quantum dot precursor, the graphene quantum dots having a size of about 50 nm or less; and a solvent.

Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle

Provided are a hardmask composition and a method of forming a fine pattern using the hardmask composition, the hardmask composition including a solvent, a 2D carbon nanostructure (and/or a derivative thereof), and a 0D carbon nanostructure (and/or a derivative thereof).

Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask composition

A conductor including a graphene layer and a method of manufacturing the conductor are provided. The conductor may further include a nano pattern disposed on a substrate, and the graphene layer may be formed on the nano pattern. The nano pattern may have any various shapes and include a material that interacts with the graphene layer. The nano pattern and the graphene layer included in the conductor may interact with each other, such that the electric characteristics of the conductor are maintained while the heat transfer characteristics thereof are improved.

Conductor including nano-patterned substrate and method of manufacturing the conductor

A method of analyzing growth of a two-dimensional material includes forming a two-dimensional material layer includes defects on a substrate, depositing detection material layers on the defects, and one of (i) capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or (ii) obtaining map coordinates of the detection material layers and processing the obtained map coordinates.

Method of analyzing growth of two-dimensional material

Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance

An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.

Growing community of inventors

Hwaseong-si, South Korea

Seongjun Jeong