Samsung Electronics Co., Ltd.

Seongjin Kim

Wandong Kim

Sang-Wan Nam

Jinwoo Park

Jeong-ho Park

Ji-Yun Seol

Chiweon Yoon

Yong-Hoon Lee

Minhyun Kim

Cheonan Lee

Kichang Jang

Joonsoo Kwon

Jayang Yoon

Eui-Tae Hwang

According to the present disclosure, a nonvolatile memory device may include an operational amplifier comparing a reference voltage with a voltage of a feedback node; a first feedback network circuit generating a first output voltage by dividing an input voltage in response to an output voltage of the operational amplifier, and transmitting a voltage corresponding to the first output voltage to the feedback node in response to a first feedback signal, a second feedback network circuit generating a second output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the second output voltage to the feedback node in response to a second feedback signal, and a third feedback network circuit generating a third output voltage by dividing the input voltage in response to the output voltage of the operational amplifier, and transmitting a voltage corresponding to the third output voltage to the feedback node in response to a third feedback signal.

Nonvolatile memory device and operating method with operational amplifier having feedback path

A memory device includes a cell region in which memory blocks are disposed, each memory block including word lines stacked on a substrate, and channel structures penetrating through the word lines, and a peripheral circuit region including peripheral circuits executing an erase operation of deleting data for each of the memory blocks as a unit. The peripheral circuits control a voltage applied to each word line included in a target memory block to delete data in the erase operation, based on at least one of a position of the target memory block, a height of each word line included in the target memory block, and a profile of each channel structure.

Memory device

A program method of a non-volatile memory device, the non-volatile memory device including a cell string having memory cells stacked perpendicular to a surface of a substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell after the first memory cell is completely programmed, the second memory cell being connected to a second word line closer to the substrate than the first word line, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

Non-volatile memory devices and program methods thereof

A program method of a non-volatile memory device, the non-volatile memory device including a peripheral circuit region and a memory cell region including a cell substrate and a cell string having memory cells stacked perpendicular to a surface of a cell substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell being connected to a second word line closer to the cell substrate, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

A method for performing communication in a multi-stage beam forming system includes determining statistical channel information which indicates a priority of analog beams transmitted by a base station, configuring an adaptive code book for digital beam forming, based on the statistical channel information and analog beams which the base station uses in actual communication among the analog beams, and performing communication with the base station through the digital beam forming based on the adaptive code book. A terminal includes a channel estimator configured to perform channel estimation for analog beams transmitted from a base station, a controller configure to determine statistical channel information indicating a priority of the analog beams, and configure an adaptive code book for digital beam forming based on the statistical channel information and analog beams that the base station uses in actual communication among the analog beams, and a communication unit.

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Gimpo-si, South Korea

Seongjin Kim