Samsung Electronics Co., Ltd.

Seongjin Cho

Jungmin You

Hijung Kim

Hoyoun Kim

Bumhan Kim

Hanjun Kim

Sunjune Kong

Jihyuk Lim

Yongjoon Kim

Donghak Shin

Naekyung Kim

Kyuchang Kang

Keonwoo Park

A memory device includes a memory cell array including a plurality of memory cells coupled to wordlines and bitlines, a target row refresh logic configured to perform a refresh operation based on a weighted access count on the memory cell array, a register configured to store a weighted access count for each of a plurality of row addresses; an accumulator configured to accumulate a current weighted access count corresponding to an access spacing to the weighted access count stored in the register, and a calculator configured to calculate the access spacing.

Memory device, memory system including the same and method of operating the same

A memory device includes a memory cell array having a plurality of memory cells connected to wordlines and bitlines, a target row refresh logic configured to perform a refresh operation on at least one of target rows of the memory cell array in response to a refresh management mode command, a weak pattern detector that is activated according to a register update bit value included in the refresh management mode command and that outputs a risk level for each of the target rows, and a mode register circuit that updates at least one mode register value according to the risk level.

Memory device, memory system having the same and method of operating the same

A semiconductor device includes a memory cell array that includes a plurality of memory cells electrically connected to a plurality of word lines and a plurality of bit lines, a word line driving circuit that includes a plurality of sub-word line decoders electrically connected to the plurality of word lines, and a control logic configured to determine a selected word line and unselected word lines among the plurality of word lines, and configured to control the word line driving circuit such that at least one of the unselected word lines that is adjacent to the selected word line is floated during at least a portion of a period in which a voltage of the selected word line returns to an initial level.

Semiconductor device

A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines, a target row refresh logic circuit configured to select a target row address from among a plurality of target row addresses as a refresh row address based on victim point values, and perform a refresh operation on first memory cells of the plurality of memory cells connected to a wordline of the plurality of wordlines indicated by the refresh row address, a victim point table configured to store the victim point values for the target row addresses, and a victim point accumulator configured to receive a first row address from an external device, and accumulate a first victim point value for at least one target row address corresponding to the first row address during a unit time period.

Memory device, memory system having the same and operating method thereof

Memory devices and methods for controlling a row hammer are provided. The memory device includes a memory cell array including a word line and a plurality of counter memory cells storing an access count value of the word line, and a control logic circuit configured to monitor a row address accessing the word line during a row hammer monitoring time frame and to determine the row address to be a row hammer address when the number of times the word line is accessed is greater than or equal to a threshold value, wherein the row hammer address is to be stored in an address storage. The control logic circuit is further configured to hold up a determination operation for a next row hammer address, based on activation of a latch full signal indicating that there is no free space to store the row hammer address in the address storage.

Memory devices and methods for controlling row hammer

A bit line sense amplifier includes a first inverter having an output terminal connected to a complementary sensing bit line, a second inverter having an output terminal connected to a sensing bit line, a first offset element connecting a bit line to the complementary sensing bit line and a second offset element connecting a complementary bit line to the sensing bit line, in response to an offset cancellation signal. During a first time interval, the first offset element and the second offset element are turned off and a capacitor of a first memory cell is connected to the bit line. During a second time interval after the first time interval, the first offset element and the second offset element are turned on and the capacitor of the first memory cell is disconnected from the bit line.

Bit line sense amplifier and memory device including the same

The present disclosure provides methods, apparatuses, and systems having reduced power noise in a refresh operation. In some embodiments, an operating method includes: performing, in response to receiving a first refresh command, a first normal refresh, at a first refresh timing, in which first N word lines of a plurality of word lines are simultaneously refreshed, and a first target refresh, at a second refresh timing, on at least one first victim word line that is adjacent to a maximum activated word line that is most frequently activated from among the plurality of word lines; and performing, in response to receiving a second refresh command, a second normal refresh, at a third refresh timing, in which second N word lines are simultaneously refreshed, and a second target refresh, at a fourth refresh timing, on at least one second victim word line that is adjacent to the maximum activated word line.

Memory device having reduced power noise in refresh operation and operating method thereof

A method of controlling a row hammer swaps a first address entry with a second address entry having the smallest second access number and randomly swaps the first address entry with a third address entry having a third access number which is not the greatest value, in an address table representing a correlation between an address entry accessed during a row hammer monitoring time frame and an access number, thereby preventing a hacker-pattern row hammer aggression from being easily performed.

Memory device and method of controlling row hammer

A semiconductor memory device includes a memory cell array including memory cell row, each of which includes volatile memory cells, a row hammer management circuit, a repair control circuit and a connection logic. The row hammer management circuit counts access addresses associated with the memory cell rows to store counting values, and determines a hammer address associated with least one of the memory cell rows, which is intensively accessed, based on the counting values. The repair control circuit includes repair controllers, each of which includes a defective address storage, and repairs a defective memory cell row among the memory cell rows. The connection logic connects first repair controllers, which are unused for storing defective addresses, among the plurality of repair controllers, to the row hammer management circuit. The row hammer management circuit uses the first repair controllers as a storage resource to store a portion of the access addresses.

Semiconductor memory device and method of operating semiconductor memory device

An electronic device including a secure Integrated Circuit (IC) is provided. The electronic device includes a secure IC configured as a System-on-Chip (SoC) and configured to provide a general environment and a security environment, wherein the secure IC includes a main processor configured to operate in the general environment, a secure processor configured to operate in the security environment and control security of data using a first security key, and a secure memory configured to be operatively connected to the secure processor and store a second security key corresponding to the first security key. Various other embodiments are possible.

Electronic device including secure integrated circuit

A wearable device includes at least one lens, an output device, at least one sensor, and at least one processor. The at least one processor is configured to identify a level of light sensed through the at least one sensor. The at least one processor is also configured to provide a notification related to the level of the light by using the output device when the level of the light satisfies a preset condition.

Growing community of inventors

Suwon-si, South Korea

Seongjin Cho