Korea Institute of Industrial Technology

Seongjae Boo

Jong Ho Lee

Chaehwan Jeong

Ho-Sung Kim

A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H) gas and silane (SiH) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.

Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition

In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H) gas and silane (SiH) gas, the mixed gas having a silane gas (SiH) in a ratio of 0.016 to 0.02.

In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H) gas, silane (SiH) gas, diborane (BH) and ethylene (CH) gas, wherein the ethylene (CH) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.

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Gwangju, South Korea

Seongjae Boo