Samsung Electronics Co., Ltd.

Yonsei University

Seongil O

Kyomin Sohn

Sukhan Lee

Namsung Kim

Shinhaeng Kang

Hak-Soo Yu

Chankyung Kim

Jongpil Son

Nam Sung Kim

Jaeyoun Youn

Haesuk Lee

Youngcheon Kwon

Sang-Hyuk Kwon

Youngjin Cho

Sungchul Park

Hak-soo Yu

Jiwon Lee

Sanguhn Cha

Won Woo Ro

Uksong Kang

Seungwoo Seo

Sungyong Seo

Soo-Ho Cha

Sanghyuk Kwon

Yuhwan Ro

Kwangchol Choe

William Jinho Song

A memory device includes a memory having a memory bank, a processor in memory (PIM) circuit, and control logic. The PIM circuit includes instruction memory storing at least one instruction provided from a host. The PIM circuit is configured to process an operation using data provided by the host or data read from the memory bank and to store at least one instruction provided by the host. The control logic is configured to decode a command/address received from the host to generate a decoding result and to perform a control operation so that one of i) a memory operation on the memory bank is performed and ii) the PIM circuit performs a processing operation, based on the decoding result. A counting value of a program counter instructing a position of the instruction memory is controlled in response to the command/address instructing the processing operation be performed.

Memory device for processing operation, data processing system including the same, and method of operating the memory device

A memory device configured to perform in-memory processing includes a plurality of in-memory arithmetic units each configured to perform in-memory processing of a pipelined arithmetic operation, and a plurality of memory banks allocated to the in-memory arithmetic units such that a set of n memory banks is allocated to each of the in-memory operation units, each memory bank configured to perform an access operation of data requested from the in-memory arithmetic units while the pipelined arithmetic operation is performed. Each of the in-memory arithmetic units is configured to operate at a first operating frequency that is less than or equal to a product of n and a second operating frequency of each of the memory banks.

Memory device for performing in-memory processing

A memory device includes a memory cell array, signal lines, a mode selector circuit, a command converter circuit, and an internal processor. The memory cell array includes first and second memory regions. The mode selector circuit is configured to generate a processing mode selection signal for controlling the memory device to enter an internal processing mode based on the address received together with the command. The command converter circuit is configured to convert the received command into an internal processing operation command in response to activation of the internal processing mode selection signal. The internal processor is configured to perform an internal processing operation on the first memory region in response to the internal processing operation command, in the internal processing mode.

Method of performing internal processing operations with pre-defined protocol interface of memory device

A memory device including: a plurality of pins for receiving control signals from an external device; a first bank having first memory cells, wherein the first bank is activated in a first operation mode and a second operation mode; a second bank having second memory cells, wherein the second bank is deactivated in the first operation mode and activated in the second operation mode; a processing unit configured to perform an operation on first data, output from the first memory cells, and second data, output from the second memory cells, in the second operation mode; and a processing-in-memory (PIM) mode controller configured to select mode information, indicating one of the first operation mode and the second operation mode, in response to the control signals and to control at least one memory parameter, at least one mode register set (MRS) value, or a refresh mode according to the mode information.

Memory device, a controller for controlling the same, a memory system including the same, and a method of operating the same

A controller is provided. The controller creates a page table including page table entries including mapping information for translating a virtual address to a physical address. Each of the page table entries includes: a virtual page number, a physical frame number, valid information, and size information. The virtual page number is included in a virtual address, the physical frame number is included in a physical address, the valid information includes a first predetermined number of bits, and the size information includes a second predetermined number of bits. The first predetermined number of bits represents an address translation range in a page table entry or a number of page table entries to be grouped, and the size information represents a size indicated by each bit of the first predetermined number of bits.

Controller, computing system including the same, and method of creating and searching page table entry for the same

A semiconductor memory device includes a plurality of memory bank groups configured to be accessed in parallel; an internal memory bus configured to receive external data from outside the plurality of memory bank groups; and a first computation circuit configured to receive internal data from a first memory bank group of the plurality of memory bank groups during each first period of a plurality of first periods, receive the external data through the internal memory bus during each second period of a plurality of second periods, the second period being shorter than the first period, and perform a processing in memory (PIM) arithmetic operation on the internal data and the external data during each second period.

Semiconductor memory device employing processing in memory (PIM) and method of operating the semiconductor memory device

A memory device includes a memory cell array including a plurality of banks each including a plurality of memory cells connected to a plurality of word lines, and a row decoder block connected to the plurality of banks. In a first operation mode, the row decoder block receives a first row address and a first bank address together with an activation command and activates a word line selected by the first row address from among the plurality of word lines of a bank selected by the first bank address from among the plurality of banks. In a second operation mode, the row decoder block receives a second row address and a second bank address together with the activation command and activates a word line selected by the second row address from among the plurality of word lines of each of at least two banks of the plurality of banks.

Memory devices including an operation mode supporting virtual bank calculation, and operating methods of the memory devices

Managing memory device with processor-in-memory circuit to perform memory or processing operation

A memory device including an interface circuit for data conversion according to different endian formats includes an interface circuit that performs data conversion with hardware in a data transfer path inside the memory device in accordance with a memory bank, a processing element (PE), and an endian format of a host device. The interface circuit is (i) between a memory physical layer interface (PHY) region and a serializer/deserializer (SERDES) region, (ii) between the SERDES region and the memory bank or the PE, (iii) between the SERDES region and a bank group input/output line coupled to a bank group including a number of memory banks, and (iv) between the PE and bank local input/output lines coupled to the memory bank.

Memory device including interface circuit for data conversion according to different endian formats

A memory controller includes a memory request queue that stores a memory request associated with a memory device including the first memory die and the second memory die having a shared channel, an address converter that selects one of first and second address mapping tables for the first memory die and the second memory die based on a bit of a physical address of the memory request and converts the physical address into a memory address based on the selected address mapping table and a physical layer that transmits the memory address to the memory device through the channel.

Memory controller including plurality of address mapping tables, system on chip, and electronic device

A high bandwidth memory and a system having the same are disclosed. The high bandwidth memory includes a buffer die and a plurality of memory dies, each of which includes at least one first processing element bank group and at least one second processing element bank group. The at least one first processing element bank group includes one or more first banks connected to one or more first bank input/output line groups, and a first processing element controller connected to the one or more first bank input/output line groups and a first global input/output line group, and is configured to perform a first processing operation on first data output from one of the one or more first bank input/output line groups and second data transmitted through the first global input/output line group based on a first instruction that is generated based on a first processing command.

High bandwidth memory and system having the same

A memory module includes semiconductor memory devices mounted on a circuit board and a control device mounted on the circuit board. Each semiconductor memory device includes a memory cell array to store data. The control device receives a command and an access address from an external device and provides the command and the access address to the semiconductor memory devices. Each semiconductor memory device performs an address swapping operation to randomly swap a portion of bits of the access address to generate a swapped address in response to a power-up signal or a reset signal, and enables a respective target word-line from among word-lines in the memory cell array such that two or more of the semiconductor memory devices enable different target word-lines in response to the access address.

Memory modules and stacked memory devices

A stacked memory device includes a plurality memory semiconductor dies, a plurality of through silicon vias, a function-in-memory (FIM) front-end circuit and a plurality of FIM back-end circuits. The buffer semiconductor die is configured to communicate with a host device. The memory semiconductor dies are stacked on the buffer semiconductor die, and include a plurality of memory banks. The through-silicon vias electrically connect the buffer semiconductor die and the memory semiconductor dies. The FIM front-end circuit receives a plurality of FIM instructions for a FIM operation from the host device, and stores the FIM instructions. The FIM operation includes data processing based on internal data read from the memory banks. The FIM back-end circuits are respectively included in the memory semiconductor dies. The FIM back-end circuits perform the FIM operation corresponding to the plurality of FIM instructions stored in the FIM front-end circuit under control of the FIM front-end circuit.

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Suwon-si, South Korea

Seongil O