Yonsei University

Seongil Im

Sung Jin Yang

WooYoung Lee

YoungTack Lee

HwaeBong Jung

Provided are a vertical Schottky barrier diode using a two-dimensional layered semiconductor and a fabrication method thereof, the vertical Schottky barrier diode having excellent response characteristics in a high frequency region and capable of being directly fabricated from a material having a low melting point such as glass or plastic because its fabrication process is performed at a relatively low temperature. The vertical Schottky barrier diode includes: an ohmic contact layer formed of a metal; a two-dimensional layered semiconductor formed of two-dimensional transition metal dichalcogenides (TMDs) on one surface of the ohmic contact layer; a Schottky contact layer formed on one surface of the two-dimensional layered semiconductor; and a non-conductive layer formed on the other surface of the ohmic contact layer or one surface of the Schottky contact layer.

Vertical Schottky barrier diodes using two-dimensional layered semiconductors and fabrication methods thereof

A hydrogen sensor includes a hydrogen-sensing unit and a transistor connected to the hydrogen-sensing unit. The hydrogen-sensing unit includes a substrate made of an elastic material, a thin film made of transition metal or alloy thereof, disposed on the surface of the substrate and having a plurality of nanogaps formed therein, and an electrode formed on the thin film. The hydrogen-sensing unit is connected with a source (or drain) or a gate of the transistor via a connector.

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Seoul, South Korea

Seongil Im