Samsung Electronics Co., Ltd.

Seonghwee Cheong

Mansug Kang

Heesook Park

Myung-ho Kong

Youngwook Park

Taekjung Kim

Joon Hyuk Kim

KiHong Nam

Gyuwan Choi

A semiconductor memory device can include a first conductive line crossing over a field isolation region and crossing over an active region of the device, where the first conductive line can include a first conductive pattern being doped, a second conductive pattern, and a metal-silicon-nitride pattern between the first and second conductive patterns and can be configured to provide a contact at a lower boundary of the metal-silicon-nitride pattern with the first conductive pattern and configured to provide a diffusion barrier at an upper boundary of the metal-silicon-nitride pattern with the second conductive pattern.

Semiconductor devices including metal-silicon-nitride patterns

A semiconductor device with vertical channel transistors and a method of fabricating the same are provided. A method of fabricating the semiconductor device includes patterning a substrate to form a trench that defines an active region, forming a sacrificial pattern in a lower region of the trench, forming a spacer on an upper sidewall of the trench, recessing a top surface of the sacrificial pattern to form a window exposing a sidewall of the active region between the spacer and the sacrificial pattern, doping a sidewall of the trench through the window to form a doped region in the active region, and forming a wiring in the trench to be connected to the doped region.

Semiconductor device with vertical channel transistor and method of fabricating the same

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Seoul, South Korea

Seonghwee Cheong