Samsung Electronics Co., Ltd.

Seonghun Lim

Wookyung You

Il Gyu Kim

Jongmin Baek

Kyuhee Han

Jinhyung Park

Deokyoung Jung

Jangho Lee

Chin Woo Kim

KyoungWoo Lee

Kyeongbeom Park

Suhyun Park

Kyoungwoo Lee

Jaemyung Choi

Kyoungpil Park

Juyoung Jung

Sungbin Park

Nayon Kim

A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

Semiconductor device

A semiconductor device includes a first insulating layer disposed on a substrate, a first wiring disposed in the first insulating layer, a first insulating barrier layer disposed on the first insulating layer, an etch-stop layer disposed on the first insulating barrier layer and having an area smaller than an area of the first insulating barrier layer in a plan view, a resistive metal pattern disposed on the etch-stop layer, a second insulating barrier layer disposed on the resistive metal pattern, a second insulating layer covering the first and second insulating barrier layers, a second wiring disposed in the second insulating layer, and a first conductive via disposed between the resistive metal pattern and the second wiring to penetrate through the second insulating barrier layer and the second insulating layer and electrically connect the resistive metal pattern and the second wiring.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Seonghun Lim