Samsung Electronics Co., Ltd.

Seongho Shin

Inho Choi

Yonghoon Kim

Seung-Yong Cha

Keung Beum Kim

Se-Ho You

Bangweon Lee

Jichul Kim

Yunhyeok Im

Kyol Park

A semiconductor device may include a substrate, a first semiconductor chip buried in the substrate, a first antenna pattern, a second antenna pattern, and outer terminals. A bottom surface of the substrate may include first and second regions spaced apart from each other. The first semiconductor chip may have a first active surface that is directed to the top surface of a core portion of the substrate. The first antenna pattern may be provided on the top surface of the substrate and electrically connected to the first semiconductor chip. The outer terminals may be provided on the first region of the bottom surface of the substrate, and the second antenna pattern may be provided on the second region of the bottom surface of the substrate.

Semiconductor device

A semiconductor device is provided, which comprises a first semiconductor package, a second semiconductor package, and a connection structure. The first semiconductor package includes a first substrate. The first substrate includes a first region and a second region. The second semiconductor package is mounted on the first semiconductor package. The connection structure electrically connects the second semiconductor package and the first semiconductor package. The connection structure comprises first connection patterns at the first region. The first connection patterns provide a data signal at the first region. The connection structure further comprises second connection patterns at the second region. The second connection patterns provide a control/address signal at the second region. A number of the second connection patterns is less than a number of the first connection patterns.

A semiconductor package includes a lower package including a lower semiconductor chip on a lower package substrate, an upper package on the lower package, and a heat interface material between the lower package and the upper package. The upper package includes an upper semiconductor chip on an upper package substrate including a center portion adjacent to the lower semiconductor chip and an edge portion. The heat interface material is in contact with a top surface of the lower semiconductor chip and the upper package substrate. The upper package substrate includes a heat diffusion via penetrating the center portion and an interconnection via penetrating the edge portion. The interconnection via is spaced apart from the heat diffusion via.

Semiconductor packages including heat diffusion vias and interconnection vias

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Hwaseong-si, South Korea

Seongho Shin