Samsung Electronics Co., Ltd.

Seongheon Yu

Joungyeal Kim

Doowon Bong

Chulung Kim

Sangwoo Kim

Younghoon Son

Wooil Kim

Hyunjin Ko

Hyeonsoo Sim

An apparatus includes a host and a memory device connected to the host through a bus. The bus is used to communicate a data clock controlling data write timing during a write operation executed by the memory device and a read clock controlling data read timing during a read operation executed by the memory device. The memory device performs first duty cycle monitoring that monitors a duty cycle of the data clock, generates a first result, and provides a timing-adjusted data clock, performs second duty cycle monitoring that monitors a duty cycle of the read clock, generates a second result, and provides a timing-adjusted read clock, calculates an offset of the read clock based on the timing-adjusted data clock, the result and the second result, and corrects a duty error of the read clock using a read clock offset code derived from the offset of the read clock.

Apparatus, memory device, and method reducing clock training time

A memory device includes a command decoder configured to receive a command, a data clock receiving circuit configured to receive a data clock signal, and a control logic configured to control the data clock receiving circuit based on the command decoded by the command decoder, and enable the data clock receiving circuit. The control logic enables the data clock receiving circuit in response to the memory device receiving a dynamic data clock command. The data clock receiving circuit is in an enabled state until a predetermined particular command is received.

Memory device receiving data clock signals and operation method thereof

In a method of controlling on-die termination (ODT) in a memory system including a plurality of memory units that shares a data bus to transfer data, ODT circuits of the plurality of memory units are enabled into an initial state, a resistance value of the ODT circuit is set to a first resistance value, of at least one write non-target memory unit among the plurality of memory units during a write operation on a write target memory unit among the plurality of memory units, and a resistance value of the ODT circuit is set to a second resistance value, of at least one read non-target memory unit among the plurality of memory units during a read operation on a read target memory unit among the plurality of memory units.

Method of controlling on-die termination and memory system performing the same

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Suwon-si, South Korea

Seongheon Yu