Industry-University Cooperation Foundation Hanyang University

Seongchul Hong

Jinho Ahn

Jung Hwan Kim

Seungmin Lee

Seung Min Lee

Junghwan Kim

Jung Sik Kim

Hyun Min Song

Jungsik Kim

Jae Uk Lee

Jaeuk Lee

Kilbock Lee

A lithography apparatus comprises a light source for emitting light; a mask mounting zone where a mask for reflecting the light is disposed; and a mask protective module disposed on the mask to transmit the light from the light source toward the mask. The mask protective module comprises a frame and a membrane supported by the frame, wherein the membrane includes a penetration region for transmitting the light and a peripheral region of which a light transmittance is lower than that of the penetration region.

Mask protective module, pellicle having the same, and lithography apparatus having the same

A mask protective module is provided. The mask protective module includes a frame and a membrane supported by the frame. The membrane may include regions of which light transmittances, heat conductivities and/or strengths are different from each other.

A mask for an extreme ultraviolet (EUV) lithography process is provided. The mask includes a substrate, a reflection layer including first material layers and second material layers which are alternately and repeatedly stacked on the substrate, a capping layer on the reflection layer, and a phase shift layer and an absorber layer sequentially stacked on the capping layer. Sidewalls of the phase shift layer and the absorber layer may be oblique to a top surface of the capping layer.

Mask for extreme ultraviolet lithography process and method of fabricating the same

A pellicle for EUV lithography is provided. The pellicle for EUV lithography may improve strength of a pellicle film by having a strength reinforcing layer including a first coupling layer and a carbon nanostructure disposed on a first inorganic layer, the first coupling layer here increase coupling strength between the first inorganic layer and the strength reinforcing layer, and a strength reinforcing layer including a carbon nanostructure. Also, a pellicle for EUV lithography according to another embodiment and a method of fabricating the same are provided. The pellicle for EUV lithography includes a plurality of holes and is a porous thin film made of a material with an extinction coefficient less than or equal to 0.02, and a diameter of the holes is less than or equal to 1 &#x3bc;m. Accordingly, improved strength is achievable because thickness may be made large with still having high EUV transmission.

Pellicle for EUV lithography

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Seoul, South Korea

Seongchul Hong