Samsung Electronics Co., Ltd.

Seongchan Lee

Inyong Hwang

Subin Yun

Taehun Kim

Sanghoon Kim

Jinyoung Song

Jaehun Jung

Youngmin You

Ilsung Bae

Wonho Jang

Chulhee Kim

Suhwan Lim

A refrigerator includes a body including an inner case, a first storage compartment, a second storage compartment, a third storage compartment, a first partition between the second storage and the third storage compartments, a second partition between the first and the second storage compartments, a cold air supplier in the third storage compartment to generate cold air, a first communication hole, a second communication hole to face the first communication hole, a first guide duct formed in the first partition to guide the cold air from the first communication hole to the second communication hole, and a second guide duct formed in the second partition to guide the cold air which has flown to the first guide duct, to the second storage compartment, the second guide duct connected to the first guide duct through the second communication hole.

Refrigerator

A refrigerator is provided. The refrigerator includes: an outer case forming an exterior of the refrigerator; an inner case disposed inside the outer case, forming a storage compartment therein, and having a communication hole formed through a side surface thereof; a partition supported by the inner case to partition the storage compartment, and including a heat insulator inlet at a position corresponding to the communication hole; and a heat insulator filled between the outer case and the inner case and filled into the partition through the heat insulator inlet, wherein the partition includes a first vertical partitioning wall disposed between the outer case and the inner case and having a height to limit a size of the heat insulator inlet.

A semiconductor device includes gate electrodes and insulating layers spaced apart from each other on a substrate and alternately stacked in a direction perpendicular to an upper surface of the substrate, and channel structures that extend through stack structures. Ones of the structures include a channel insulating layer, a pad layer on the channel insulating layer, and a channel layer. The channel layer includes a first channel region, and a second channel region including a semiconductor material having a length shorter than a length of the first channel region and having an impurity concentration of a first conductivity type and the pad layer includes a semiconductor material doped with a second conductivity type impurity. A height level of a lower surface of the second channel region is lower than a height level of a lower surface of a first erase gate electrode.

Semiconductor device

Growing community of inventors

Suwon-si, South Korea

Seongchan Lee